公开(公告)号：US20210062087A1

公开(公告)日：2021-03-04

申请号：US17007179

申请日：2020-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Kun Su PARK ,  Yuho WON ,  Jeong Hee LEE ,  Eun Joo JANG ,  Hyo Sook JANG ,  Yong Seok HAN ,  Heejae CHUNG

IPC: C09K11/88 ,  H01L33/18 ,  H01L51/50

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US20230071604A1

公开(公告)日：2023-03-09

申请号：US18054687

申请日：2022-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Kun Su PARK ,  Yuho WON ,  Jeong Hee LEE ,  Eun Joo JANG ,  Eun Joo JANG ,  Hyo Sook JANG ,  Yong Seok HAN ,  Heejae CHUNG

IPC: C09K11/88 ,  H01L51/50

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US20230094022A1

公开(公告)日：2023-03-30

申请号：US17991903

申请日：2022-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Yuho WON ,  Eun Joo JANG ,  Heejae CHUNG ,  Oul CHO

IPC: C09K11/88 ,  C09K11/08 ,  H01L51/50

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

公开(公告)号：US20210102119A1

公开(公告)日：2021-04-08

申请号：US17036122

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Yuho WON ,  Eun Joo JANG ,  Heejae CHUNG ,  Oul CHO

IPC: C09K11/88 ,  C09K11/08 ,  H01L51/50

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

公开(公告)号：US20220416187A1

公开(公告)日：2022-12-29

申请号：US17851211

申请日：2022-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hyung KIM ,  Heejae CHUNG ,  Eun Joo JANG ,  Sujin PARK ,  Yuho WON

IPC: H01L51/50

Abstract: An electroluminescent display device and a light emitting device including a blue light emitting layer include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer including a plurality of nanostructures, the plurality of nanostructures does not include cadmium. On an application of a bias voltage, the blue light emitting layer is configured to emit light of an emission peak wavelength (λmax) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm. During a bias voltage change from a first voltage to a second voltage, the second voltage being greater than the first voltage by at least about 5 volts, the emission peak wavelength (λmax) of the blue light emitting layer may exhibit a first emission peak wavelength (a 1st λmax wavelength) that is less than an emission peak wavelength at the first voltage (λmax@first voltage) and an emission peak wavelength at the second voltage (λmax@second voltage), and during the bias voltage change, a change width in emission peak wavelength (λmax) is less than or equal to about 4 nm.

公开(公告)号：US20150262727A1

公开(公告)日：2015-09-17

申请号：US14538556

申请日：2014-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

Inventor： Kyungsang CHO ,  Dongho KIM ,  Heejae CHUNG

IPC: H01B1/12 ,  H01B1/10

CPC classification number: C09K11/02 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/565 ,  C09K11/883 ,  Y10S977/774 ,  Y10S977/897 ,  Y10S977/932

Abstract: Provided is a nanoparticle polymer in which a plurality of core particles that are linked to each other by a linker are surrounded by a metal-chalcogenide compound shell. The nanoparticle polymer may include a nanoparticle polymer including a core assembly including at least two nanoparticles connected to each other by a linker; and a shell that surrounds a surface of the core assembly and includes a metal-chalcogenide compound.

Abstract translation: 提供了一种纳米颗粒聚合物，其中通过连接体彼此连接的多个核心颗粒被金属 - 硫属化物化合物壳包围。 纳米颗粒聚合物可以包括纳米颗粒聚合物，其包括包含通过连接体彼此连接的至少两个纳米颗粒的芯组件; 以及围绕所述芯组件的表面并包括金属 - 硫属化物化合物的壳。