公开(公告)号：US20230194591A1

公开(公告)日：2023-06-22

申请号：US17975202

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyeong Yun ,  Meehyun Lim ,  Sungjin Kim ,  Masahiko Yamabe ,  Sungyeol Kim ,  Sungyong Lim ,  Sunghwi Cho

IPC: G01R29/12 ,  H01L21/687 ,  H01L21/683 ,  H01L21/66

CPC classification number: G01R29/12 ,  H01L21/6833 ,  H01L21/68742 ,  H01L22/12

Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.

公开(公告)号：US20250004028A1

公开(公告)日：2025-01-02

申请号：US18884376

申请日：2024-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyeong Yun ,  Meehyun Lim ,  Sungjin Kim ,  Masahiko Yamabe ,  Sungyeol Kim ,  Sungyong Lim ,  Sunghwi Cho

IPC: G01R29/12 ,  H01L21/66 ,  H01L21/683 ,  H01L21/687

Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.

公开(公告)号：US20240055243A1

公开(公告)日：2024-02-15

申请号：US18124954

申请日：2023-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taekjin Kim ,  Meehyun Lim ,  Sungyeol Kim ,  Junbum Park ,  Sungyoung Yoon ,  Jinyeong Yun ,  Jungchul Lee ,  Sungyong Lim ,  Sunghwi Cho

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32972 ,  H01L21/67253 ,  H01L21/67069 ,  H01L21/6833 ,  H01J2237/24495

Abstract: A semiconductor equipment monitoring apparatus including a wafer-type sensor inside a process chamber and configured to sense a plasma state inside the process chamber; a light detector and analyzer configured to detect and analyze light sensed by the wafer-type sensor; and a light coupler between the wafer-type sensor and the light detector and analyzer and configured to transmit the light sensed by the wafer-type sensor to the light detector and analyzer. The wafer-type sensor includes a plurality of sensors each comprising a passive element.

公开(公告)号：US12105132B2

公开(公告)日：2024-10-01

申请号：US17975202

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyeong Yun ,  Meehyun Lim ,  Sungjin Kim ,  Masahiko Yamabe ,  Sungyeol Kim ,  Sungyong Lim ,  Sunghwi Cho

IPC: G01R29/12 ,  H01L21/66 ,  H01L21/683 ,  H01L21/687

CPC classification number: G01R29/12 ,  H01L21/6833 ,  H01L21/68742 ,  H01L22/12

Abstract: An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.