公开(公告)号：US20150004783A1

公开(公告)日：2015-01-01

申请号：US14286170

申请日：2014-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Ho LEE ,  Min-Keun KWAK ,  Bum-Joon YOUN ,  Sung-Won CHOI

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/28088 ,  H01L21/823437 ,  H01L21/823842 ,  H01L27/10876 ,  H01L29/4236 ,  H01L29/66545

Abstract: A method for making a semiconductor device includes forming a trench in a first layer on a substrate. A conductive layer having a pattern is formed in the trench. A first metal gate electrode is formed on the conductive layer, and a second metal gate electrode is formed on the first metal gate electrode. The first and second metal gate electrodes at least partially conform to the pattern of the conductive layer. Widths of first surfaces of the first and second metal gate electrodes are different from respective widths of second surfaces of the first and second metal gate electrodes as a result of the pattern.

Abstract translation: 制造半导体器件的方法包括在衬底上的第一层中形成沟槽。 在沟槽中形成具有图案的导电层。 第一金属栅电极形成在导电层上，第二金属栅电极形成在第一金属栅电极上。 第一和第二金属栅电极至少部分地符合导电层的图案。 作为图案的结果，第一和第二金属栅电极的第一表面的宽度不同于第一和第二金属栅电极的第二表面的宽度。

公开(公告)号：US20160005590A1

公开(公告)日：2016-01-07

申请号：US14625907

申请日：2015-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Hum PARK ,  Sung-Won CHOI ,  Chang-Ho HAN

IPC: H01L21/02 ,  G05B19/402

CPC classification number: G05B19/402 ,  G03F7/70633 ,  G05B2219/45031 ,  H01L22/12 ,  H01L22/20

Abstract: A method for fabricating a semiconductor device includes obtaining first raw data by measuring an overlay of a semiconductor wafer of a first lot and generating a regression equation based on the first raw data. A semiconductor wafer of a second lot is aligned based on a coefficient of the regression equation, second raw data is obtained by measuring an overlay of the aligned semiconductor wafer of the second lot, and the regression equation is corrected based on the second raw data. Correction of the regression equation includes dividing the regression equation into an initial equation and a residual equation excluding the initial equation from the regression equation, correcting a coefficient of the initial equation; and correcting a coefficient of the residual equation.

Abstract translation: 一种制造半导体器件的方法包括：通过测量第一批次的半导体晶片的叠加并基于第一原始数据产生回归方程来获得第一原始数据。 基于回归方程的系数对第二批次的半导体晶片进行对准，通过测量第二批次的对准的半导体晶片的叠加来获得第二原始数据，并且基于第二原始数据校正回归方程。 回归方程的校正包括将回归方程分为初始方程和除回归方程之外的初始方程的残差方程，校正初始方程的系数; 并校正残差方程的系数。