公开(公告)号：US20160005590A1

公开(公告)日：2016-01-07

申请号：US14625907

申请日：2015-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Hum PARK ,  Sung-Won CHOI ,  Chang-Ho HAN

IPC: H01L21/02 ,  G05B19/402

CPC classification number: G05B19/402 ,  G03F7/70633 ,  G05B2219/45031 ,  H01L22/12 ,  H01L22/20

Abstract: A method for fabricating a semiconductor device includes obtaining first raw data by measuring an overlay of a semiconductor wafer of a first lot and generating a regression equation based on the first raw data. A semiconductor wafer of a second lot is aligned based on a coefficient of the regression equation, second raw data is obtained by measuring an overlay of the aligned semiconductor wafer of the second lot, and the regression equation is corrected based on the second raw data. Correction of the regression equation includes dividing the regression equation into an initial equation and a residual equation excluding the initial equation from the regression equation, correcting a coefficient of the initial equation; and correcting a coefficient of the residual equation.

Abstract translation: 一种制造半导体器件的方法包括：通过测量第一批次的半导体晶片的叠加并基于第一原始数据产生回归方程来获得第一原始数据。 基于回归方程的系数对第二批次的半导体晶片进行对准，通过测量第二批次的对准的半导体晶片的叠加来获得第二原始数据，并且基于第二原始数据校正回归方程。 回归方程的校正包括将回归方程分为初始方程和除回归方程之外的初始方程的残差方程，校正初始方程的系数; 并校正残差方程的系数。