公开(公告)号：US09490216B2

公开(公告)日：2016-11-08

申请号：US14596480

申请日：2015-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Jin Moon ,  Tae-Seong Kim ,  Byung-Lyul Park ,  Jae-Hwa Park ,  Suk-Chul Bang

IPC: H01L23/522 ,  H01L23/544 ,  H01L23/31 ,  H01L23/48 ,  H01L21/768

CPC classification number: H01L23/544 ,  H01L21/76898 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/522 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a semiconductor device and a semiconductor package. The semiconductor device includes semiconductor device includes a semiconductor substrate having a first side and a second side. A front-side structure including an internal circuit is disposed on the first side of the semiconductor substrate. A passivation layer is disposed on the second side of the semiconductor substrate. A through-via structure passes through the semiconductor substrate and the passivation layer. A back-side conductive pattern is disposed on the second side of the semiconductor substrate. The back-side conductive pattern is electrically connected to the through-via structure. An alignment recessed area is disposed in the passivation layer. An insulating alignment pattern is disposed in the alignment recessed area.

Abstract translation: 提供半导体器件和半导体封装。 半导体器件包括半导体器件，其包括具有第一侧和第二侧的半导体衬底。 包括内部电路的前侧结构设置在半导体衬底的第一侧上。 钝化层设置在半导体衬底的第二侧上。 通孔结构通过半导体衬底和钝化层。 背面导电图案设置在半导体衬底的第二侧上。 背面导电图案电连接到通孔结构。 在钝化层中设置对准凹陷区域。 绝缘对准图案设置在对准凹陷区域中。

公开(公告)号：US08860221B2

公开(公告)日：2014-10-14

申请号：US13685174

申请日：2012-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kun-Sang Park ,  Byung-Lyul Park ,  Su-Kyoung Kim ,  Kwang-Jin Moon ,  Suk-Chul Bang ,  Do-Sun Lee ,  Dong-Chan Lim ,  Gil-Heyun Choi

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L24/28 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0655 ,  H01L2224/05009 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05547 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/08147 ,  H01L2224/08148 ,  H01L2224/0903 ,  H01L2224/8001 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/04941 ,  H01L2924/04953

Abstract: Provided are electrode-connecting structures or semiconductor devices, including a lower device including a lower substrate, a lower insulating layer formed on the lower substrate, and a lower electrode structure formed in the lower insulating layer, wherein the lower electrode structure includes a lower electrode barrier layer and a lower metal electrode formed on the lower electrode barrier layer, and an upper device including an upper substrate, an upper insulating layer formed under the upper substrate, and an upper electrode structure formed in the upper insulating layer, wherein the upper electrode structure includes an upper electrode barrier layer extending from the inside of the upper insulating layer under a bottom surface thereof and an upper metal electrode formed on the upper electrode barrier layer. The lower metal electrode is in direct contact with the upper metal electrode.

Abstract translation: 提供了电极连接结构或半导体器件，包括下部器件，包括下部衬底，形成在下部衬底上的下部绝缘层和形成在下部绝缘层中的下部电极结构，其中下部电极结构包括下部电极 阻挡层和形成在下电极阻挡层上的下金属电极，以及上装置，包括上基板，形成在上基板下的上绝缘层和形成在上绝缘层中的上电极结构，上电极 结构包括从其下表面上的上绝缘层的内部延伸的上电极阻挡层和形成在上电极阻挡层上的上金属电极。 下部金属电极与上部金属电极直接接触。