公开(公告)号：US10607672B2

公开(公告)日：2020-03-31

申请号：US15995533

申请日：2018-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soong-Man Shin ,  Hyungjin Kim ,  YoungWóok Kim

IPC: G11C7/00 ,  G11C7/22 ,  G06F13/16 ,  G11C8/18 ,  G11C7/10

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

公开(公告)号：US11158359B2

公开(公告)日：2021-10-26

申请号：US17178397

申请日：2021-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungjin Kim ,  Soong-Man Shin

IPC: G11C7/22 ,  G06F3/06 ,  G11C7/10

Abstract: A storage device includes a nonvolatile memory device, and a controller that exchanges a data signal with the nonvolatile memory device through a data input and output line and exchanges a data strobe signal with the nonvolatile memory device through a data strobe line. In a training operation, at least one of the nonvolatile memory device and the controller performs a coarse training of adjusting a delay of the data signal with a first stride and a fine training of adjusting the delay of the data signal with a second stride smaller than the first stride.

公开(公告)号：US10366023B2

公开(公告)日：2019-07-30

申请号：US15964993

申请日：2018-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： YoungWook Kim ,  Hyung-jin Kim ,  Soong-Man Shin ,  Keun-Hwan Lee

IPC: G11C7/00 ,  G06F13/16 ,  G11C7/10 ,  G11C7/22 ,  G06F3/06

Abstract: An operation method performed at a nonvolatile memory device may include receiving a program command and an address from an external device through a data signal (DQ), receiving a specific pattern from the external device through the data signal and a data strobe signal (DQS) synchronized with the data signal in a pattern period, receiving user data from the external device through the data signal and the data strobe signal in a data period, and selectively performing a program operation on the user data or a recovery operation based on a determination of whether the specific pattern matches with a particular pattern. A rising edge or a falling edge of the data strobe signal may be aligned with a left edge or a right edge of a window of the data signal in the pattern period.

公开(公告)号：US20190079882A1

公开(公告)日：2019-03-14

申请号：US15964993

申请日：2018-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： YoungWook KIM ,  Hyung-jin Kim ,  Soong-Man Shin ,  Keun-Hwan Lee

IPC: G06F13/16 ,  G11C7/10 ,  G11C7/22 ,  G06F3/06

CPC classification number: G06F13/1689 ,  G06F3/0614 ,  G06F3/0658 ,  G06F3/0673 ,  G11C7/1009 ,  G11C7/1093 ,  G11C7/22 ,  G11C16/06 ,  G11C16/32 ,  G11C29/52 ,  G11C2207/2254

Abstract: An operation method performed at a nonvolatile memory device may include receiving a program command and an address from an external device through a data signal (DQ), receiving a specific pattern from the external device through the data signal and a data strobe signal (DQS) synchronized with the data signal in a pattern period, receiving user data from the external device through the data signal and the data strobe signal in a data period, and selectively performing a program operation on the user data or a recovery operation based on a determination of whether the specific pattern matches with a particular pattern. A rising edge or a falling edge of the data strobe signal may be aligned with a left edge or a right edge of a window of the data signal in the pattern period.

公开(公告)号：US11972836B2

公开(公告)日：2024-04-30

申请号：US17355746

申请日：2021-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soong-Man Shin ,  Hyungjin Kim ,  Youngwook Kim

IPC: G11C7/00 ,  G06F13/16 ,  G11C7/10 ,  G11C7/22 ,  G11C8/18

CPC classification number: G11C7/222 ,  G06F13/1689 ,  G11C7/1066 ,  G11C7/1093 ,  G11C8/18

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

公开(公告)号：US11069388B2

公开(公告)日：2021-07-20

申请号：US17012767

申请日：2020-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soong-Man Shin ,  Hyungjin Kim ,  YoungWook Kim

IPC: G11C7/00 ,  G11C7/22 ,  G06F13/16 ,  G11C8/18 ,  G11C7/10

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

公开(公告)号：US10930329B2

公开(公告)日：2021-02-23

申请号：US16410370

申请日：2019-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungjin Kim ,  Soong-Man Shin

IPC: G11C7/22 ,  G11C7/10 ,  G06F3/06

Abstract: A storage device includes a nonvolatile memory device, and a controller that exchanges a data signal with the nonvolatile memory device through a data input and output line and exchanges a data strobe signal with the nonvolatile memory device through a data strobe line. In a training operation, at least one of the nonvolatile memory device and the controller performs a coarse training of adjusting a delay of the data signal with a first stride and a fine training of adjusting the delay of the data signal with a second stride smaller than the first stride.

公开(公告)号：US10770123B2

公开(公告)日：2020-09-08

申请号：US16834595

申请日：2020-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soong-Man Shin ,  Hyungjin Kim ,  YoungWook Kim

IPC: G11C7/00 ,  G11C7/22 ,  G06F13/16 ,  G11C7/10 ,  G11C8/18

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.