公开(公告)号：US10522218B2

公开(公告)日：2019-12-31

申请号：US16190278

申请日：2018-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Parvinder Kumar Rana ,  Lava Kumar Pulluru ,  Shuvadeep Kumar ,  Ankur Gupta

IPC: G11C11/419 ,  G11C11/418

Abstract: Embodiments herein provide a method for reducing power dissipation in a Static Random Access Memory (SRAM) device. The method includes determining, by the tracking circuit, whether at least one SRAM Bit-Cell discharges power from at least one BL exceeding a pre-defined voltage level required for a sense amplifier to perform a read operation. Furthermore, the method includes reducing, by the WL driver, the power discharged from the at least one BL by controlling a WL voltage power supply switch of the WL driver using a SAE signal and adjusting a pulse width of the at least one WL to pull down the at least one WL using a NMOS circuit when the at least one SRAM Bit-Cell discharges the power from the at least one BL exceeding the pre-defined voltage level.

公开(公告)号：US20190147943A1

公开(公告)日：2019-05-16

申请号：US16190278

申请日：2018-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Parvinder Kumar RANA ,  Lava Kumar PULLURU ,  Shuvadeep Kumar ,  Ankur GUPTA

IPC: G11C11/419 ,  G11C11/418

CPC classification number: G11C11/419 ,  G11C7/08 ,  G11C7/222 ,  G11C8/08 ,  G11C8/18 ,  G11C11/418

Abstract: Embodiments herein provide a method for reducing power dissipation in a Static Random Access Memory (SRAM) device. The method includes determining, by the tracking circuit, whether at least one SRAM Bit-Cell discharges power from at least one BL exceeding a pre-defined voltage level required for a sense amplifier to perform a read operation. Furthermore, the method includes reducing, by the WL driver, the power discharged from the at least one BL by controlling a WL voltage power supply switch of the WL driver using a SAE signal and adjusting a pulse width of the at least one WL to pull down the at least one WL using a NMOS circuit when the at least one SRAM Bit-Cell discharges the power from the at least one BL exceeding the pre-defined voltage level.