公开(公告)号：US12094941B2

公开(公告)日：2024-09-17

申请号：US17712726

申请日：2022-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggwang Kim ,  Sangkoo Kang ,  Donghyun Roh ,  Koungmin Ryu

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L29/41791 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/7851

Abstract: A semiconductor device includes a gate structure including a gate electrode, a gate spacer layer on a side surface of the gate electrode, and a gate capping layer on the gate electrode. Moreover, the semiconductor device includes a source/drain region on at least one side of the gate structure, a contact plug on the source/drain region, and first and second insulating films between the contact plug and the gate structure and defining an air gap. The first insulating film includes a first surface, and a second surface extending from the first surface while forming a first angle. The second insulating film includes a third surface forming a second angle with the first surface of the first insulating film. The second angle is an acute angle narrower than the first angle. The air gap is defined by the first surface, the second surface, and the third surface.

公开(公告)号：US20230080850A1

公开(公告)日：2023-03-16

申请号：US17712726

申请日：2022-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggwang Kim ,  Sangkoo Kang ,  Donghyun Roh ,  Koungmin Ryu

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10

Abstract: A semiconductor device includes a gate structure including a gate electrode, a gate spacer layer on a side surface of the gate electrode, and a gate capping layer on the gate electrode. Moreover, the semiconductor device includes a source/drain region on at least one side of the gate structure, a contact plug on the source/drain region, and first and second insulating films between the contact plug and the gate structure and defining an air gap. The first insulating film includes a first surface, and a second surface extending from the first surface while forming a first angle. The second insulating film includes a third surface forming a second angle with the first surface of the first insulating film. The second angle is an acute angle narrower than the first angle. The air gap is defined by the first surface, the second surface, and the third surface.