公开(公告)号：US20230079697A1

公开(公告)日：2023-03-16

申请号：US17868401

申请日：2022-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINWOO LEE ,  YUNSE OH ,  BYUNG-SUNG KIM ,  SUTAE KIM ,  Seung CHOI

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

Abstract: Disclosed is a semiconductor device including: a substrate including a first active pattern separated into a pair of first active patterns by a trench; a device isolation layer filling the trench; first source/drain patterns on the first active pattern; a first channel pattern connected to the first source/drain patterns and including semiconductor patterns; a first dummy gate electrode that extends while being adjacent to a first sidewall of the trench; a gate electrode that is spaced apart in the first direction from the first dummy gate electrode and extends while running across the first channel pattern, a gate capping pattern on the gate electrode; a gate contact coupled to the gate electrode; and a separation pattern extending between the gate electrode and the first dummy gate electrode. A top surface of the separation pattern is at a same level as that of the gate capping pattern.

公开(公告)号：US20250014995A1

公开(公告)日：2025-01-09

申请号：US18663381

申请日：2024-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo LEE ,  Hojun CHOI ,  Sutae KIM ,  Hyelim KIM ,  Seung CHOI

IPC: H01L23/528 ,  H01L23/522 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a plurality of active patterns respectively extending on a substrate in a first direction, a separation pattern extending on the substrate in a second direction, and dividing each of the plurality of active patterns into first and second active patterns, the separation pattern including a first separation pattern and a second separation pattern, the second separation pattern being shifted from the first separation pattern in the first direction to partially overlap the first separation pattern in the second direction, first and second dummy gate structures on first and second sides of the separation pattern, respectively, and extending along corresponding end portions of the first and second active patterns in the second direction, respectively, and a plurality of first and second gate structures crossing portions of the first and second active patterns, respectively, and extending in the second direction.