公开(公告)号：US20250142814A1

公开(公告)日：2025-05-01

申请号：US18667445

申请日：2024-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yonghyeok Son ,  Jeongil Seo ,  Donghun Lee ,  Seungmo Kang ,  Seung Joo Lee ,  Yujin Cho ,  Seongjun Choi

IPC: H10B12/00

Abstract: A semiconductor device includes an interconnection line, an insulating layer on the interconnection line and having an opening exposing a top surface of the interconnection line, and a redistribution pattern extending into the opening and electrically connected to the interconnection line at a bottom surface of the opening. The interconnection line is configured to provide a current path in a first direction in a region adjacent to the redistribution pattern. The opening comprises a first side surface facing the first direction. A corner region of the opening protrudes away from or is recessed towards the opening at an end portion of the first side surface of the opening when viewed in plan view.