Abstract:
Provided are photomask and a method of correcting errors thereof. The photomask includes a multilayer reflection film covering one side surface of a substrate and an energy receiving layer covering the other side surface of the substrate. The method includes determining a local correction position on a frontside surface of the photomask according to a detected error of the photomask, and locally applying an energy beam to a backside surface region of the photomask aligned with the local correction position in a thickness direction of the photomask. The invention may be applicable to structures other than photomasks that benefit from modification of surface heights or selectively applied stress.
Abstract:
A semiconductor device manufacturing apparatus includes a mask stage including a mask holder system that fixes a photomask, the mask holder system having a first fixing portion mounted at a first position of the mask holder system to fix the photomask, and a second fixing portion at a second position of the mask holder system and spaced apart from the first position, the second fixing portion fixing a pellicle assembly to be spaced apart from the photomask on the first fixing portion.
Abstract:
An extreme ultra violet (EUV) generation device includes a light source for outputting laser beam, a pulse width compression system for compressing a pulse width of the laser beam, a gas cell for receiving the laser beam having the compressed pulse width incident from the pulse width compression system and generating EUV light, and a vacuum chamber housing the pulse width compression system and the gas cell.