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公开(公告)号:US20220410368A1
公开(公告)日:2022-12-29
申请号:US17510366
申请日:2021-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seonah NAM , Myeongsang Yu , Yusun Lee , Jiyeon Lee , Dain Chung , Jangwon Lee , Jinsung Kim
IPC: B25J9/00 , B25J11/00 , G05B19/4155
Abstract: A robot includes at least one motor driving the robot to perform a predetermined motion; a memory storing a motion map database and a program comprising one or more instructions; and at least one processor electrically connected to the at least one motor and the memory, the at least one processor being configured to: obtain an input motion identifier based on a user input, identify a motion state indicating whether the robot is performing a motion, based on the motion state being in an active state, store the input motion identifier in the memory, and based on the motion state being in an idle state: determine an active motion identifier from at least one motion identifier stored in the memory based on a predetermined criterion; and control the at least one motor to drive a motion corresponding to the active motion identifier based on the motion map database.
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公开(公告)号:US20220375932A1
公开(公告)日:2022-11-24
申请号:US17880819
申请日:2022-08-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seonah NAM , Byungju KANG , Byungsung KIM , Hyelim KIM , Sungho PARK , Yubo QIAN
IPC: H01L27/088 , H01L29/423 , H01L29/06 , H01L23/538
Abstract: A semiconductor device includes first and second external dummy areas, and a circuit area between the first and second external dummy areas. The circuit area includes circuit active regions and circuit gate lines. Each external dummy area includes an external dummy active region and external dummy gate lines overlapping the external dummy active region and spaced apart from the circuit gate lines. The external dummy active region has a linear shape extending in a first horizontal direction or a shape including active portions isolated from direct contact with each other and extending sequentially in the first horizontal direction. The circuit active regions are between the first and second external dummy active regions and include a first plurality of circuit active regions extending sequentially in the first horizontal direction and a second plurality of circuit active regions extending sequentially in a second horizontal direction perpendicular to the first horizontal direction.
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公开(公告)号:US20240162226A1
公开(公告)日:2024-05-16
申请号:US18416375
申请日:2024-01-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seonah NAM , Byungju KANG , Byungsung KIM , Hyelim KIM , Sungho PARK , Yubo QIAN
IPC: H01L27/088 , H01L23/538 , H01L29/06 , H01L29/423
CPC classification number: H01L27/088 , H01L23/5384 , H01L29/0653 , H01L29/4232
Abstract: A semiconductor device includes first and second external dummy areas, and a circuit area between the first and second external dummy areas. The circuit area includes circuit active regions and circuit gate lines. Each external dummy area includes an external dummy active region and external dummy gate lines overlapping the external dummy active region and spaced apart from the circuit gate lines. The external dummy active region has a linear shape extending in a first horizontal direction or a shape including active portions isolated from direct contact with each other and extending sequentially in the first horizontal direction. The circuit active regions are between the first and second external dummy active regions and include a first plurality of circuit active regions extending sequentially in the first horizontal direction and a second plurality of circuit active regions extending sequentially in a second horizontal direction perpendicular to the first horizontal direction.
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公开(公告)号:US20210175232A1
公开(公告)日:2021-06-10
申请号:US17024044
申请日:2020-09-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seonah NAM , Byungju KANG , Byungsung KIM , Hyelim KIM , Sungho PARK , Yubo QIAN
IPC: H01L27/088 , H01L23/538 , H01L29/06 , H01L29/423
Abstract: A semiconductor device includes first and second external dummy areas, and a circuit area between the first and second external dummy areas. The circuit area includes circuit active regions and circuit gate lines. Each external dummy area includes an external dummy active region and external dummy gate lines overlapping the external dummy active region and spaced apart from the circuit gate lines. The external dummy active region has a linear shape extending in a first horizontal direction or a shape including active portions isolated from direct contact with each other and extending sequentially in the first horizontal direction. The circuit active regions are between the first and second external dummy active regions and include a first plurality of circuit active regions extending sequentially in the first horizontal direction and a second plurality of circuit active regions extending sequentially in a second horizontal direction perpendicular to the first horizontal direction.
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