公开(公告)号：US20210152772A1

公开(公告)日：2021-05-20

申请号：US16996264

申请日：2020-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myunglae CHU ,  Sungyong KIM ,  Seoksan KIM ,  Minwoong SEO ,  Jaekyu LEE ,  Jongyeon LEE ,  Junan LEE

IPC: H04N5/3745 ,  H04N5/378

Abstract: Provided are a pixel array and an image sensor. The pixel array includes a plurality of pixels, which are arranged in a matrix form and which convert an optical signal into an electrical signal. The pixel array includes a first pixel arranged in a first row of the pixel array and a second pixel arranged in a second row of the pixel array, wherein each of the first pixel and the second pixel includes a first memory storing a digital reset value according to internal noise, the first memory of the first pixel stores m-bit data (where m is a natural number equal to or greater than 2), and the first memory of the second pixel stores n-bit data (where n is a natural number less than m).

公开(公告)号：US20220394197A1

公开(公告)日：2022-12-08

申请号：US17744165

申请日：2022-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunyong JUNG ,  Seoksan KIM ,  Minwoong SEO ,  Myunglae CHU

IPC: H04N5/355 ,  H04N5/3745 ,  H01L27/146

Abstract: An image sensor includes a pixel having an internal capacitor. Each of a plurality of pixels of the image sensor includes a photodetection circuit and an analog-to-digital converter (ADC). The photodetection circuit generates a detection signal. The ADC converts the detection signal using a ramp signal. The photodetection circuit includes a photodiode, a floating diffusion node and an overflow transistor. The floating diffusion node accumulates photocharges generated by the photodiode and includes a parasitic capacitor. The overflow transistor electrically connects the floating diffusion node to a first internal capacitor of the ADC.

公开(公告)号：US20230378204A1

公开(公告)日：2023-11-23

申请号：US18228959

申请日：2023-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seoksan KIM ,  Minwoong SEO ,  Myunglae CHU ,  Jong-yeon LEE ,  Min-Jun CHOI

IPC: H01L27/146 ,  H04N25/77

CPC classification number: H01L27/14605 ,  H04N25/77

Abstract: An image sensor device including: a first digital pixel including a first photodetector and first memory cells to store a first digital signal corresponding to a first output from the first photodetector; and a second digital pixel including a second photodetector and second memory cells to store a second digital signal corresponding to a second output from the second photodetector, the second digital pixel is adjacent to one side of the first digital pixel, the first memory cells and the second memory cells are connected with a plurality of bit lines, the first memory cells are connected with a first word line and a third word line, the second memory cells are connected with a second word line and a fourth word line, the second word line is between the first and third word lines, and the third word line is between the second and fourth word lines.