公开(公告)号：US09305919B2

公开(公告)日：2016-04-05

申请号：US13792867

申请日：2013-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-Sik Yoo ,  Se-Il Oh

IPC: H01L27/13 ,  H01L27/08 ,  H01L27/04 ,  H01L49/02

CPC classification number: H01L27/0805 ,  H01L27/04 ,  H01L28/90

Abstract: A semiconductor device includes an internal circuit and a cell-type power decoupling capacitor. The cell-type power decoupling capacitor is formed on a semiconductor substrate using a stack cell capacitor process. The cell-type power decoupling capacitor stabilizes a supply voltage to provide the stabilized supply voltage to the internal circuit. Accordingly, the semiconductor device including the cell-type power decoupling capacitor may be insensitive to power noise and may occupy a small area on a chip.

Abstract translation: 半导体器件包括内部电路和电池型功率去耦电容器。 电池型功率去耦电容器使用堆叠电池电容器工艺形成在半导体衬底上。 电池型功率去耦电容稳定电源电压，以向内部电路提供稳定的电源电压。 因此，包括单元型功率去耦电容器的半导体器件可能对功率噪声不敏感，并且可能占用芯片上的小面积。

公开(公告)号：US10748846B2

公开(公告)日：2020-08-18

申请号：US16582706

申请日：2019-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-Il Oh ,  Jung-Ha Oh ,  Hyuck-Joon Kwon ,  Jong-Hyuk Kim ,  Jong-Moon Yoon

IPC: H01L23/522 ,  H01L23/14 ,  H01L23/482 ,  H01L23/532 ,  H01L23/485 ,  H01L49/02 ,  H01L23/00 ,  H01L23/58

Abstract: A semiconductor device may include an insulating layer, a pad, a circuit, at least one first wiring, at least one second wiring, at least one third wiring, and a pad contact. The pad may be disposed on the insulating layer. The circuit may be disposed in the insulating layer. The circuit may be positioned below the pad. The first wiring may be disposed between the pad and the circuit. The second wiring may be disposed between the pad and the first wiring. The third wiring may be disposed between the pad and the second wiring. The pad contact may be configured to directly connect the pad to the circuit.

公开(公告)号：US10438886B2

公开(公告)日：2019-10-08

申请号：US15674878

申请日：2017-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-Il Oh ,  Jung-Ha Oh ,  Hyuck-Joon Kwon ,  Jong-Hyuk Kim ,  Jong-Moon Yoon

IPC: H01L23/522 ,  H01L49/02 ,  H01L23/485 ,  H01L23/58 ,  H01L23/482 ,  H01L23/14 ,  H01L23/532

Abstract: A semiconductor device may include an insulating layer, a pad, a circuit, at least one first wiring, at least-one second wiring, at least one third wiring, and a pad contact. The pad may be disposed on the insulating layer. The circuit may be disposed in the insulating layer. The circuit may be positioned below the pad. The first wiring may be disposed between the pad and the circuit. The second wiring may be disposed between the pad and the first wiring. The third wiring may be disposed between the pad and the second wiring. The pad contact may be configured to directly connect the pad to the circuit.

公开(公告)号：US20130294141A1

公开(公告)日：2013-11-07

申请号：US13803612

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-Il Oh ,  Sung-Hoon Kim ,  Soo-Young Kim ,  Joung-Yeal Kim ,  Ho-Cheol Lee

IPC: G11C17/18 ,  G11C17/16

CPC classification number: G11C17/18 ,  G11C17/16

Abstract: A memory device includes a memory cell array, a column decoder, and a row decoder. The row decoder includes a first word line driver and a second word line driver. The first word line driver is configured to electrically coupled to a first set of antifuse memory cells coupled to a first word line. The second word line driver is configured to electrically coupled to a second set of antifuse memory cells coupled to a second word line. The first set of antifuse memory cells are arranged in first and third rows of the memory cell array, and the second set of antifuse memory cells are arranged in second and fourth rows of the memory cell array. The second row is arranged between the first and third rows.

Abstract translation: 存储器件包括存储单元阵列，列解码器和行解码器。 行解码器包括第一字线驱动器和第二字线驱动器。 第一字线驱动器被配置为电耦合到耦合到第一字线的第一组反熔丝存储器单元。 第二字线驱动器被配置为电耦合到耦合到第二字线的第二组反熔丝存储器单元。 第一组反熔丝存储单元布置在存储单元阵列的第一行和第三行中，第二组反熔丝存储单元布置在存储单元阵列的第二行和第四行中。 第二排布置在第一行和第三行之间。

公开(公告)号：US20130256832A1

公开(公告)日：2013-10-03

申请号：US13792867

申请日：2013-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Sik Yoo ,  Se-Il Oh

IPC: H01L27/08 ,  H01L27/04

CPC classification number: H01L27/0805 ,  H01L27/04 ,  H01L28/90

Abstract: A semiconductor device includes an internal circuit and a cell-type power decoupling capacitor. The cell-type power decoupling capacitor is formed on a semiconductor substrate using a stack cell capacitor process. The cell-type power decoupling capacitor stabilizes a supply voltage to provide the stabilized supply voltage to the internal circuit. Accordingly, the semiconductor device including the cell-type power decoupling capacitor may be insensitive to power noise and may occupy a small area on a chip.

Abstract translation: 半导体器件包括内部电路和电池型功率去耦电容器。 电池型功率去耦电容器使用堆叠电池电容器工艺形成在半导体衬底上。 电池型功率去耦电容稳定电源电压，以向内部电路提供稳定的电源电压。 因此，包括单元型功率去耦电容器的半导体器件可能对功率噪声不敏感，并且可能占用芯片上的小面积。