公开(公告)号：US20230215698A1

公开(公告)日：2023-07-06

申请号：US17865675

申请日：2022-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inhwa Baek ,  Donggap Shin ,  Yongin Lee ,  Se-Hoon Jang ,  Youngho Kim ,  Ho Kim ,  Seungdae Seok ,  Siwoong Woo

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/3244 ,  H01J37/32862 ,  H01L21/67201 ,  H01J37/32532 ,  H01L21/67051 ,  H01L21/6833

Abstract: Plasma processing apparatuses, substrate bonding systems, and substrate bonding methods are provided. The plasma processing apparatus includes a plasma process chamber that includes a process space, a load-lock chamber connected to the process space, a first vacuum pump that adjusts a pressure of the load-lock chamber, a process gas supply that supplies the process space with a process gas, and an H2O supply that supplies the process space with H2O. The plasma process chamber includes a chuck that supports a substrate and a plasma electrode to which a radio-frequency (RF) power is applied.

公开(公告)号：US09209214B2

公开(公告)日：2015-12-08

申请号：US13893592

申请日：2013-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo-Won Kwon ,  June-Mo Koo ,  Yun-Ki Lee ,  Se-Hoon Jang

IPC: H01L27/146 ,  H01L27/144

CPC classification number: H01L27/1463 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate including a front side and a back side opposite the front side, first P-type regions located adjacent to the back side and spaced apart from each other in the substrate, N-type regions located under the first P-type regions and spaced apart from each other in the substrate, and second P-type regions located adjacent to the back side and located between the first P-type regions.

Abstract translation: 半导体器件包括：基板，其包括前侧和与前侧相反的背面;位于基板的背面相邻且间隔开的第一P型区域，位于第一P- 并且在基板中彼此间隔开，并且位于相邻于背侧且位于第一P型区域之间的第二P型区域。