公开(公告)号：US10090381B2

公开(公告)日：2018-10-02

申请号：US15628675

申请日：2017-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongmin Baek ,  Vietha Nguyen ,  Wookyung You ,  Sangshin Jang ,  Byunghee Kim ,  Kyu-Hee Han

IPC: H01L21/70 ,  H01L21/76 ,  H01L29/06

Abstract: A semiconductor device comprises a lower structure on a substrate and including a recess region, first and second barrier layers covering an inner surface of the recess region and a top surface of the lower structure, the inner surface of the recess region including a bottom surface and an inner sidewall connecting the bottom surface to the top surface of the lower structure, and an interlayer dielectric layer provided on the second barrier layer and defining an air gap in the recess region. A first step coverage is obtained by dividing a thickness of the first barrier layer on an inner sidewall of the recess region by a thickness of the first barrier layer on the top surface of the lower structure. A second step coverage is obtained by dividing a thickness of the second barrier layer on the inner sidewall of the recess region by a thickness of the second barrier layer on the top surface of the lower structure. The first step coverage is different from the second step coverage.

公开(公告)号：US10199325B2

公开(公告)日：2019-02-05

申请号：US15792911

申请日：2017-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taejin Yim ,  Jongmin Baek ,  Deokyoung Jung ,  Kyuhee Han ,  Byunghee Kim ,  Jiyoung Kim ,  Naein Lee ,  Sangshin Jang

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor device is provided. The semiconductor device includes first metal lines on a lower layer, a dielectric barrier layer provided on the lower layer to cover side and top surfaces of the first metal lines, an etch stop layer provided on the dielectric barrier layer to define gap regions between the first metal lines, an upper insulating layer on the etch stop layer, and a conductive via penetrating the upper insulating layer, the etch stop layer, and the dielectric barrier layer to contact a top surface of a first metal line. The etch stop layer includes first portions on the first metal lines and second portions between the first metal lines. The second portions of the etch stop layer are higher than the first portions.