公开(公告)号：US10446207B2

公开(公告)日：2019-10-15

申请号：US16253956

申请日：2019-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-kyung Kim ,  Dong-seok Kang ,  Hye-jin Kim ,  Chul-woo Park ,  Dong-hyun Sohn ,  Yun-sang Lee ,  Sang-beom Kang ,  Hyung-rock Oh ,  Soo-ho Cha

IPC: G11C11/00 ,  G11C11/16 ,  G06F12/02

Abstract: A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.

公开(公告)号：US10204670B2

公开(公告)日：2019-02-12

申请号：US13768858

申请日：2013-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-kyung Kim ,  Dong-seok Kang ,  Hye-jin Kim ,  Chul-woo Park ,  Dong-hyun Sohn ,  Yun-sang Lee ,  Sang-beom Kang ,  Hyung-rock Oh ,  Soo-ho Cha

IPC: G11C11/00 ,  G11C11/16 ,  G06F12/02

Abstract: A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.