公开(公告)号：US09087885B2

公开(公告)日：2015-07-21

申请号：US14247234

申请日：2014-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Wook Ji ,  Yeong-Lyeol Park ,  Hyoung-Yol Mun ,  In-Kyum Lee

IPC: H01L21/331 ,  H01L21/8222 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L21/76898 ,  H01L21/6835 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/481 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2221/68327 ,  H01L2224/02311 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05687 ,  H01L2224/06182 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13184 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/04941 ,  H01L2924/01074 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/0496 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01028 ,  H01L2924/01079

Abstract: Provided is a method of fabricating a semiconductor device. In one embodiment, the method includes forming at least one unit device in a substrate and on a front side of the substrate, forming a through-silicon via (TSV) structure apart from the at least one unit device to substantially vertically penetrate the substrate, the TSV structure having a back end including a concave portion, forming an internal circuit on the front side of the substrate and a front end of the TSV structure to be electrically connected to the at least one unit device and the front end of the TSV structure, forming a front side bump on the front side of the substrate to be electrically connected to the front end of the TSV structure, forming a redistribution layer on a back side of the substrate to be electrically connected to the back end of the TSV structure, and forming a back side bump to be electrically connected to the redistribution layer.

Abstract translation: 提供一种制造半导体器件的方法。 在一个实施例中，该方法包括在衬底中和衬底的正面上形成至少一个单元器件，形成远离至少一个单元器件的贯穿硅通孔（TSV）结构，以基本上垂直地穿透衬底， 所述TSV结构具有后端，所述后端包括凹部，在所述基板的前侧形成内部电路，并且所述TSV结构的前端电连接到所述至少一个单元装置和所述TSV结构的前端 在所述基板的前侧形成前侧凸块以与TSV结构的前端电连接，在所述基板的背侧形成再分配层，以与TSV结构的后端电连接， 以及形成背面凸块以与再分布层电连接。