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    THERMOPLASTIC RESIN COMPOSITION AND MOLDED ARTICLE MADE THEREFROM
    3.
    发明申请
    THERMOPLASTIC RESIN COMPOSITION AND MOLDED ARTICLE MADE THEREFROM 审中-公开
    热塑性树脂组合物及其制品

    公开(公告)号：US20160130435A1

    公开(公告)日：2016-05-12

    申请号：US14812828

    申请日：2015-07-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seungjoon Hwang ,  Kyunghae Lee ,  Chansu Kim ,  Jun Chwae

    IPC: C08L67/04 ,  C08K5/00

    CPC classification number: C08L67/04 ,  C08K5/0016

    Abstract: A thermoplastic resin composition including a first thermoplastic polymer and a second thermoplastic polymer, wherein the first thermoplastic polymer is a block copolymer including a plurality of polymer blocks, at least one of the plurality of polymer blocks includes a random copolymer, and at least one structural unit of the first thermoplastic polymer and a structural unit of the second thermoplastic polymer are stereoisomers, a molded article made therefrom, and methods of making the same.

    Abstract translation: 一种包含第一热塑性聚合物和第二热塑性聚合物的热塑性树脂组合物，其中所述第一热塑性聚合物是包含多个聚合物嵌段的嵌段共聚物，所述多个聚合物嵌段中的至少一个包括无规共聚物，和至少一个结构 第一热塑性聚合物的单位和第二热塑性聚合物的结构单元是立体异构体，由其制成的模制品及其制备方法。

    Nonvolatile memory device and method of detecting wordline defect of the same
    10.
    发明授权
    Nonvolatile memory device and method of detecting wordline defect of the same 有权

    公开(公告)号：US11915773B2

    公开(公告)日：2024-02-27

    申请号：US17693571

    申请日：2022-03-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyunghae Lee ,  Buil Nam ,  Jinsun Yeom ,  Sangwan Nam ,  Jaein Lee

    IPC: G11C16/30 ,  G11C16/04 ,  G11C16/08 ,  G11C29/12 ,  G11C29/38

    CPC classification number: G11C29/38 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/30 ,  G11C29/12005

    Abstract: A nonvolatile memory device includes a memory cell array, a voltage generator, a voltage path circuit and a wordline defect detection circuit. The memory cell array includes memory cells and wordlines connected to the memory cells. The voltage generator generates a wordline voltage applied to the wordlines. The voltage path circuit between the voltage generator and the memory cell array transfers the wordline voltage to the wordlines. The wordline defect detection circuit is connected to a measurement node between the voltage generator and the voltage path circuit. The wordline defect detection circuit measures a path leakage current of the voltage path circuit based on a measurement voltage of the measurement node to generate an offset value corresponding to the path leakage current in a compensation mode and determines defect of each wordline of the wordlines based on the offset value and the measurement voltage in a defect detection mode.

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