公开(公告)号：US20220293180A1

公开(公告)日：2022-09-15

申请号：US17689005

申请日：2022-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeduk LEE ,  Kinam KIM ,  Sujin AHN

IPC: G11C16/04 ,  H01L27/11519 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11524

Abstract: Provided are semiconductor devices and data storage systems including the same. The semiconductor devices may include first and second separation structures parallel to each other, a block between the first and second separation structures, and bit lines on the block. The block includes strings, the bit lines include a first bit line electrically connected to first and second strings, each of the strings includes a lower select transistor, memory cell transistors, and upper select transistors connected in series, the upper select transistors in each of the strings include a first upper select transistor and a second upper select transistor below the first upper select transistor. The first upper select transistors of the first and second strings may share a single first upper select gate electrode. Gate electrodes of the lower select transistors of the first and second strings may include surfaces coplanar with each other.