公开(公告)号：US20240232012A1

公开(公告)日：2024-07-11

申请号：US18399864

申请日：2023-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongmuk KANG ,  KYUNG-HO LEE ,  MYUNGKYU LEE ,  KI-HEUNG KIM ,  KYOMIN SOHN ,  KIJUN LEE ,  SUNGHYE CHO ,  HYONGRYOL HWANG

IPC: G06F11/10 ,  G11C7/06 ,  G11C7/10 ,  G11C7/12 ,  G11C29/42

CPC classification number: G06F11/1068 ,  G11C7/06 ,  G11C7/1078 ,  G11C7/12 ,  G11C29/42

Abstract: A memory device includes an ECC circuit that performs error correction code (ECC) encoding on input data to generate write data, and a memory cell array including a plurality of memory cells that stores the write data. The ECC circuit includes a data splitter that splits the input data into first sub-data and second sub-data, a first ECC encoder that performs ECC encoding on the first sub-data to generate first sub-parity data, a second ECC encoder that performs ECC encoding on the second sub-data to generate second sub-parity data, and a data scrambler that performs a data scrambling operation with respect to the first sub-data, the second sub-data, the first sub-parity data, and the second sub-parity data based on a structure of the memory cell array to generate the write data.

公开(公告)号：US20170287969A1

公开(公告)日：2017-10-05

申请号：US15623635

申请日：2017-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNGJOO NAH ,  JUNG-CHAK AHN ,  KYUNG-HO LEE

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14689

Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

公开(公告)号：US20160104740A1

公开(公告)日：2016-04-14

申请号：US14878631

申请日：2015-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YI-TAE KIM ,  KYUNG-HO LEE ,  DONG-YOUNG JANG ,  SUNG-HO CHOI

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a first substrate, a photodiode array, a first wiring structure, a second wiring structure, a third wiring structure and a light blocking layer pattern. The photodiode array is disposed in the first substrate. The photodiode array includes first photodiodes in a first region, second photodiodes in a second region and third photodiodes in a third region. The first wiring structure is disposed in the first region. The first wiring structure is electrically connected to the first photodiodes. The second wiring structure is disposed in the second region. The second wiring structure includes power supply wiring. The third wiring structure is disposed in the third region. The third wiring structure is electrically connected to the third photodiodes. The light blocking layer pattern is disposed on the first substrate. The light blocking layer pattern covers the third region and the fourth region.

Abstract translation: 图像传感器包括第一基板，光电二极管阵列，第一布线结构，第二布线结构，第三布线结构和遮光层图案。 光电二极管阵列设置在第一基板中。 光电二极管阵列包括第一区域中的第一光电二极管，第二区域中的第二光电二极管和第三区域中的第三光电二极管。 第一布线结构设置在第一区域中。 第一布线结构电连接到第一光电二极管。 第二布线结构设置在第二区域中。 第二布线结构包括电源线。 第三布线结构设置在第三区域中。 第三布线结构电连接到第三光电二极管。 遮光层图案设置在第一基板上。 遮光层图案覆盖第三区域和第四区域。