公开(公告)号：US20200029047A1

公开(公告)日：2020-01-23

申请号：US16291307

申请日：2019-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG-GU JIN ,  YOUNG-CHAN KIM ,  SUNG-HO CHOI

IPC: H04N5/3745 ,  H04N13/254 ,  H01L27/146 ,  G01S17/89

Abstract: A Time-of-Flight (ToF)-based three-dimensional (3D) image sensor includes at least two first photogates symmetrically arranged in a central portion of a pixel, at least two first gates configured to remove an overflow charge generated in the at least two first photogates, and a first gate group. The at least two first gates are arranged symmetrically in an outer portion of the pixel. The first gate group includes a plurality of gates configured to store and transmit charges generated in the at least two first photogates. The first gate group is arranged in the outer portion of the pixel.

公开(公告)号：US20160104740A1

公开(公告)日：2016-04-14

申请号：US14878631

申请日：2015-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YI-TAE KIM ,  KYUNG-HO LEE ,  DONG-YOUNG JANG ,  SUNG-HO CHOI

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a first substrate, a photodiode array, a first wiring structure, a second wiring structure, a third wiring structure and a light blocking layer pattern. The photodiode array is disposed in the first substrate. The photodiode array includes first photodiodes in a first region, second photodiodes in a second region and third photodiodes in a third region. The first wiring structure is disposed in the first region. The first wiring structure is electrically connected to the first photodiodes. The second wiring structure is disposed in the second region. The second wiring structure includes power supply wiring. The third wiring structure is disposed in the third region. The third wiring structure is electrically connected to the third photodiodes. The light blocking layer pattern is disposed on the first substrate. The light blocking layer pattern covers the third region and the fourth region.

Abstract translation: 图像传感器包括第一基板，光电二极管阵列，第一布线结构，第二布线结构，第三布线结构和遮光层图案。 光电二极管阵列设置在第一基板中。 光电二极管阵列包括第一区域中的第一光电二极管，第二区域中的第二光电二极管和第三区域中的第三光电二极管。 第一布线结构设置在第一区域中。 第一布线结构电连接到第一光电二极管。 第二布线结构设置在第二区域中。 第二布线结构包括电源线。 第三布线结构设置在第三区域中。 第三布线结构电连接到第三光电二极管。 遮光层图案设置在第一基板上。 遮光层图案覆盖第三区域和第四区域。