公开(公告)号：US09929160B1

公开(公告)日：2018-03-27

申请号：US15613334

申请日：2017-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juri Lee ,  Yong-Suk Tak ,  Sung-Dae Suk ,  Seungmin Song

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L27/0924 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/1037 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/78696

Abstract: Disclosed are semiconductor devices including a field effect transistor and methods of manufacturing the same. The semiconductor device comprises a device isolation layer in an upper portion of a substrate, first active patterns on a first region of the substrate and second active patterns on a second region of the substrate, gate structures extending in one direction and running across the first and second active patterns, and a blocking layer on a recessed region of the device isolation layer of the first region. Each of the first and second active patterns comprises a plurality of semiconductor patterns that are vertically stacked and spaced apart from each other. The semiconductor patterns of the first active patterns have conductivity different from that of the semiconductor patterns of the second active patterns. The blocking layer is limited on the first region.