公开(公告)号：US20250169192A1

公开(公告)日：2025-05-22

申请号：US18674705

申请日：2024-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongkyu Song ,  Jin Heo ,  Minho Kim ,  Jooyoung Song ,  Dongyup Lee ,  Chanhee Jeon

IPC: H01L27/02 ,  H01L29/73

Abstract: A semiconductor device includes a first pad configured to receive and transmit a signal; a second pad to which a predetermined reference voltage is input; and an electrostatic protection circuit includes an emitter region electrically connected to the second pad and doped with a first conductivity-type impurity, a base region having a shape surrounding the emitter region in the first direction and the second direction and doped with a second conductivity-type impurity, different from the first conductivity-type impurity, a collector region connected to the first pad and having a shape surrounding the emitter region in the first direction and the second direction, and an impurity region disposed between the collector region and the base region and separated from the collector region and the base region by an element isolation film.

公开(公告)号：US20220231126A1

公开(公告)日：2022-07-21

申请号：US17542728

申请日：2021-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongkyu Song ,  Jaehyun Yoo ,  Jangkyu Choi ,  Jin Heo ,  Changsu Kim ,  Chanhee Jeon

IPC: H01L29/08 ,  H01L29/735

Abstract: An electrostatic discharge protection device includes: an emitter region disposed on a semiconductor substrate; a base region surrounding the emitter region; a first collector region surrounding the base region; a second collector region surrounding the first collector region; a second conductivity-type drift region below the emitter region, and being deeper than the base region; a second conductivity-type well region disposed below the base region, and having a junction interface with the second conductivity-type drift region; and a plurality of isolation portions disposed between the emitter region, the base region, and the first collector region and the second collector region.

公开(公告)号：US20240405014A1

公开(公告)日：2024-12-05

申请号：US18405843

申请日：2024-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongkyu Song ,  Jin Heo ,  Minho Kim ,  Jooyoung Song ,  Eunsuk Lee ,  Chanhee Jeon

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/735 ,  H01L29/78

Abstract: The present disclosure relates to semiconductor devices. An example semiconductor device includes a first well region and a second well region isolated from each other by a first device isolation film; an NPN transistor provided by a first collector region formed in the first well region and including first conductivity-type impurities, and a first emitter region formed in the second well region and including the first conductivity-type impurities; a PNP transistor provided by a second emitter region formed in the first well region and including second conductivity-type impurities different from the first conductivity-type, and a second collector region formed in the second well region and including the second conductivity-type impurities; and an NMOS transistor including a source region and a drain region formed in the second well region and including the first conductivity-type impurities, and a gate structure disposed between the source region and the drain region.

公开(公告)号：US20240259008A1

公开(公告)日：2024-08-01

申请号：US18236303

申请日：2023-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Heo ,  Jongkyu Song ,  Minho Kim ,  Jooyoung Song ,  Chanhee Jeon

IPC: H03K17/08

CPC classification number: H03K17/08

Abstract: A semiconductor device is provided. The semiconductor device includes: a first power pad; a second power pad; a signal pad; a clamping circuit connected between the first power pad and the second power pad; a driving circuit connected to the signal pad and including a pull-up circuit and a pull-down circuit; and a first gate-off circuit connected to the pull-down circuit. The first gate-off circuit is configured to connect a gate of the pull-down circuit and a source of the pull-down circuit to each other during an electrostatic discharge (ESD) event in which a high voltage is applied to the signal pad, and control a current generated by the high voltage to flow to the clamping circuit.

公开(公告)号：US11908895B2

公开(公告)日：2024-02-20

申请号：US17542728

申请日：2021-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongkyu Song ,  Jaehyun Yoo ,  Jangkyu Choi ,  Jin Heo ,  Changsu Kim ,  Chanhee Jeon

IPC: H01L29/08 ,  H01L29/735

CPC classification number: H01L29/0821 ,  H01L29/735

Abstract: An electrostatic discharge protection device includes: an emitter region disposed on a semiconductor substrate; a base region surrounding the emitter region; a first collector region surrounding the base region; a second collector region surrounding the first collector region; a second conductivity-type drift region below the emitter region, and being deeper than the base region; a second conductivity-type well region disposed below the base region, and having a junction interface with the second conductivity-type drift region; and a plurality of isolation portions disposed between the emitter region, the base region, and the first collector region and the second collector region.