公开(公告)号：US10050129B2

公开(公告)日：2018-08-14

申请号：US15437563

申请日：2017-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Bum Lim ,  Jong-Ryul Jun ,  Eun-A Kim ,  Jong-Min Lee

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/768 ,  H01L21/306 ,  H01L21/027

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

公开(公告)号：US20180350957A1

公开(公告)日：2018-12-06

申请号：US16041025

申请日：2018-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Bum Lim ,  Jong-Ryul Jun ,  Eun-A Kim ,  Jong-Min Lee

IPC: H01L29/66 ,  H01L49/02 ,  H01L21/027 ,  H01L21/306 ,  H01L21/768

CPC classification number: H01L29/66795 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/30604 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897 ,  H01L28/00 ,  H01L29/66621

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

公开(公告)号：US10439048B2

公开(公告)日：2019-10-08

申请号：US16041025

申请日：2018-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Bum Lim ,  Jong-Ryul Jun ,  Eun-A Kim ,  Jong-Min Lee

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/306 ,  H01L21/027 ,  H01L49/02 ,  H01L21/033 ,  H01L21/311

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

公开(公告)号：US08860115B2

公开(公告)日：2014-10-14

申请号：US13796552

申请日：2013-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Ryul Jun

IPC: H01G4/01 ,  H01L27/108 ,  H01G4/012 ,  H01G4/33 ,  H01L49/02 ,  H01G4/228 ,  H01G4/40

CPC classification number: H01G4/40 ,  H01G4/012 ,  H01G4/228 ,  H01G4/33 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/84 ,  H01L28/90

Abstract: A capacitor includes a lower electrode having a curved surface, a first seed on a sidewall of the lower electrode, which the first seed includes a metal silicide and has a shape corresponding to the curved surface of the lower electrode, a dielectric layer on the lower electrode, the dielectric layer covering the first seed, and an upper electrode on the dielectric layer.

Abstract translation: 电容器包括具有弯曲表面的下电极，下电极的侧壁上的第一种子，第一种子包括金属硅化物，并且具有与下电极的弯曲表面对应的形状，下电极上的介电层 电极，覆盖第一种子的电介质层和电介质层上的上电极。