公开(公告)号：US11280753B2

公开(公告)日：2022-03-22

申请号：US16781039

申请日：2020-02-04

Applicant: Samsung Electronics Co., Ltd. ,  SEMES Co., Ltd.

Inventor： Daesung Jung ,  Heehwan Kim ,  Jiyoung Lee ,  Jongmin Song ,  Sangyoon Soh

IPC: G01N27/30 ,  H01L21/20 ,  H01L21/67 ,  G01N27/60 ,  G01R19/00 ,  H01L21/66

Abstract: Sensors for detecting a substitution between chemicals may include an upper electrode and an electrical signal measurement circuit. A first chemical and a second chemical may be sequentially applied to the upper electrode. A triboelectrification may be generated between the upper electrode and the first and second chemicals to flow different electrical signals through the upper electrode. The electrical signal measurement circuit may measure the electrical signals to detect the substitution between the first and second chemicals. Thus, the second chemical may be applied to a semiconductor substrate from the substitution timing so that an original function of the second chemical may be maintained without a delay of the time for fabricating a semiconductor device.

公开(公告)号：USD791750S1

公开(公告)日：2017-07-11

申请号：US29533776

申请日：2015-07-22

Applicant: Samsung Electronics Co., Ltd.

Designer： Dongkyun Kim ,  Kukhwan Kim ,  Sungjin Yum ,  Jinie Ryu ,  Jiyoung Lee

公开(公告)号：US20240136201A1

公开(公告)日：2024-04-25

申请号：US18381905

申请日：2023-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuseon HEO ,  Junhyeong Park ,  Jieun Park ,  Jihye Shim ,  Jiyoung Lee

IPC: H01L21/48 ,  H01L23/31 ,  H01L23/498 ,  H01L25/18 ,  H10B80/00

CPC classification number: H01L21/4857 ,  H01L23/3128 ,  H01L23/49838 ,  H01L25/18 ,  H10B80/00 ,  H01L24/04

Abstract: Provided is a method of manufacturing a semiconductor package, the method including forming a first wiring structure, coating a high transmittance photoresist on the first wiring structure a plurality of number of times, forming a plurality of openings by exposing and developing the high transmittance photoresist, forming a plurality of conductive posts by filling the plurality of openings with a conductive material, removing the high transmittance photoresist, disposing a semiconductor chip on the first wiring structure, forming an encapsulant surrounding the semiconductor chip and the plurality of conductive posts, and forming a second wiring structure on the encapsulant, wherein the light transmittance of the high transmittance photoresist at a portion where the first wiring structure and the high transmittance photoresist contact each other is greater than or equal to 3.2%.

公开(公告)号：US20240080060A1

公开(公告)日：2024-03-07

申请号：US18230926

申请日：2023-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongyeol BAE ,  Taejong Kim ,  Sangsung Lee ,  Jongsoo Lee ,  Jiyoung Lee ,  Jongmin Jeong

IPC: H04B1/40 ,  H03F3/45

CPC classification number: H04B1/40 ,  H03F3/45475 ,  H03F2200/165 ,  H03F2200/171 ,  H03F2200/451

Abstract: The present disclosure provides apparatuses for converting a current signal into a voltage signal. In some embodiments, a current-to-voltage converter includes a transimpedance amplifier, a first filter circuit coupled between an input node of the transimpedance amplifier and an internal node of the transimpedance amplifier, and a second filter circuit coupled between the input node of the transimpedance amplifier and an output node of the transimpedance amplifier. The first filter circuit is configured to operate as a low-pass filter with respect to the current signal. The second filter circuit is configured to operate as a band-pass filter with respect to the current signal. In some embodiments, a transceiver includes a receiver circuit that includes a current-to-voltage converter, a transmitter circuit. The current-to-voltage converter is configured to convert a current signal corresponding to a first reception signal into a voltage signal corresponding to a second reception signal.

公开(公告)号：USD794622S1

公开(公告)日：2017-08-15

申请号：US29535832

申请日：2015-08-11

Applicant: Samsung Electronics Co., Ltd.

Designer： Kukhwan Kim ,  Dongkyun Kim ,  Sungjin Yum ,  Jinie Ryu ,  Jiyoung Lee

公开(公告)号：USD853376S1

公开(公告)日：2019-07-09

申请号：US29626155

申请日：2017-11-15

Applicant: Samsung Electronics Co., Ltd.

Designer： Woohyeok Jeong ,  Jiyoung Lee ,  Kukhwan Kim ,  Kwang-Moon Kim ,  Young Sang Jang ,  Jin-Hoo Lee ,  Dahyun Lee

公开(公告)号：USD853375S1

公开(公告)日：2019-07-09

申请号：US29623538

申请日：2017-10-25

Applicant: Samsung Electronics Co., Ltd.

Designer： Woohyeok Jeong ,  Jiyoung Lee ,  Kukhwan Kim ,  Kwang-Moon Kim ,  Young Sang Jang ,  Jin-Hoo Lee ,  Dahyun Lee

公开(公告)号：USD813186S1

公开(公告)日：2018-03-20

申请号：US29625114

申请日：2017-11-07

Applicant: Samsung Electronics Co., Ltd.

Designer： Jiyoung Lee ,  Kwangmoon Kim ,  Kukhwan Kim ,  Hae Sung Park ,  Dahyun Lee ,  Miri Lee ,  Jin-Hoo Lee ,  Youngsang Jang ,  Woohyeok Jeong

公开(公告)号：USD803831S1

公开(公告)日：2017-11-28

申请号：US29531195

申请日：2015-06-24

Applicant: Samsung Electronics Co., Ltd.

Designer： Dongkyun Kim ,  Kukhwan Kim ,  Donghun Kim ,  Sungjin Yum ,  Jinie Ryu ,  Jiyoung Lee

公开(公告)号：USD784280S1

公开(公告)日：2017-04-18

申请号：US29536102

申请日：2015-08-13

Applicant: Samsung Electronics Co., Ltd.

Designer： Kukhwan Kim ,  Dongkyun Kim ,  Sungjin Yum ,  Jinie Ryu ,  Jiyoung Lee