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1.
公开(公告)号:US12152184B2
公开(公告)日:2024-11-26
申请号:US17243741
申请日:2021-04-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Soo Kyung Kwon , Yong Wook Kim , Seon-Yeong Kim , Ji-Yeong Kim , Jihyun Min , Eun Joo Jang , Seonmyeong Choi , Sungwoo Hwang
IPC: C09K11/88 , C09K11/56 , H10K85/10 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H10K50/115 , H10K50/16 , H10K50/17
Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, and selenium, sulfur, or a combination thereof, wherein the quantum dot does not include cadmium, a mole ratio of tellurium relative to selenium in the first semiconductor nanocrystal is greater than about 1:1, a mole ratio of a sum of selenium and sulfur relative to in the quantum dot is greater than about 1:1, a wavelength of a maximum emission peak of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and the quantum dot has quantum efficiency (QY) of greater than or equal to about 30%, a quantum dot-polymer composite including the quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the quantum dot.
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公开(公告)号:US11639467B2
公开(公告)日:2023-05-02
申请号:US17497208
申请日:2021-10-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jihyun Min , Eun Joo Jang , Yong Wook Kim
IPC: C09K11/00 , H01B1/00 , H01L27/00 , C09K11/88 , C09K11/02 , C09K11/08 , H01L27/32 , H01B1/06 , B82Y20/00 , B82Y40/00 , G02F1/1335 , G02F1/13357
Abstract: A nanoplatelet including a two-dimensional template including a first semiconductor nanocrystal; and a first shell including a second semiconductor nanocrystal disposed on a surface of the two-dimensional template, the second semiconductor nanocrystal having a composition different from the first semiconductor nanocrystal, wherein the second semiconductor nanocrystal includes a Group III-V compound, and wherein the nanoplatelet does not include cadmium.
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公开(公告)号:US11505740B2
公开(公告)日:2022-11-22
申请号:US17490552
申请日:2021-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yuho Won , Nayoun Won , Sungwoo Hwang , Eun Joo Jang , Soo Kyung Kwon , Yong Wook Kim , Jihyun Min , Garam Park , Shang Hyeun Park , Hyo Sook Jang , Shin Ae Jun , Yong Seok Han
IPC: H01L51/50 , C09K11/08 , C08L57/10 , G02F1/13357 , H01L27/32 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88 , H05B33/14 , B82Y40/00 , B82Y20/00 , G02F1/1335
Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
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公开(公告)号:US10597580B2
公开(公告)日:2020-03-24
申请号:US15335700
申请日:2016-10-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jihyun Min , Eun Joo Jang , Yongwook Kim , Garam Park
Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
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公开(公告)号:US10323179B2
公开(公告)日:2019-06-18
申请号:US15335700
申请日:2016-10-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jihyun Min , Eun Joo Jang , Yongwook Kim , Garam Park
Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
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公开(公告)号:US11827828B2
公开(公告)日:2023-11-28
申请号:US18059075
申请日:2022-11-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Garam Park , Eun Joo Jang , Yongwook Kim , Jihyun Min , Hyo Sook Jang , Shin Ae Jun , Taekhoon Kim , Yuho Won
CPC classification number: C09K11/883 , C09K11/70 , B82Y20/00 , Y10S977/774 , Y10S977/95
Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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7.
公开(公告)号:US11692136B2
公开(公告)日:2023-07-04
申请号:US17072335
申请日:2020-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seon-Yeong Kim , Soo Kyung Kwon , Yong Wook Kim , Ji-Yeong Kim , Jihyun Min , Sungwoo Hwang , Eun Joo Jang
IPC: C09K11/88 , C09K11/54 , C09K11/56 , C09K11/06 , C01G9/00 , C01G9/08 , H01L27/32 , G02F1/13357 , H10K59/38 , F21V8/00 , G02F1/1335
CPC classification number: C09K11/883 , C01G9/006 , C01G9/08 , C09K11/06 , C09K11/54 , C09K11/565 , G02F1/133621 , H10K59/38 , C01P2004/64 , C01P2004/90 , C01P2006/60 , G02B6/005 , G02F1/133614 , G02F2202/36
Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.
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8.
公开(公告)号:US11603493B2
公开(公告)日:2023-03-14
申请号:US17072440
申请日:2020-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jihyun Min , Sungwoo Hwang , Yong Wook Kim , Ji-Yeong Kim , Soo Kyung Kwon , Seon-Yeong Kim
IPC: H01L29/08 , C09K11/88 , C01B19/00 , C01G9/08 , C09K11/56 , H01L27/32 , H01L51/50 , B82Y20/00 , B82Y40/00 , F21V8/00
Abstract: A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.
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公开(公告)号:US11312904B2
公开(公告)日:2022-04-26
申请号:US16986384
申请日:2020-08-06
Inventor: Jihyun Min , Eun Joo Jang , Edward H. Sargent , Hyo Sook Jang , Makhsud I. Saidaminov , Sjoerd Hoogland , Ankit Jain , Andrew Johnston , Oleksandr Voznyy
Abstract: A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided: AxA′(3+α−x)D(2+β)E(9+γ). Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1 0, −1
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公开(公告)号:US10948770B2
公开(公告)日:2021-03-16
申请号:US15238127
申请日:2016-08-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Hyung Kim , Eun Joo Jang , Hyun A Kang , Yongwook Kim , Jihyun Min , Jeong Hee Lee , Shin Ae Jun , Oul Cho
IPC: G02F1/1335 , G02F1/13357 , F21V8/00 , H01L33/50 , B82Y20/00 , B82Y30/00
Abstract: A light source includes a light emitting element and a light conversion layer configured to convert light emitted from the light emitting element into white light; wherein the light conversion layer includes a matrix resin and a quantum dot, wherein the white light includes a red light component, a green light component, and a blue light component each having a color purity configured to display a color gamut having a concordance rate of greater than or equal to about 99.0% with an Adobe RGB color gamut of a display device, and wherein the green light component has a peak wavelength of about 525 nanometers to about 528 nanometers and a full width at half maximum of less than or equal to about 40 nanometers, and a red light component having a peak wavelength of about 625 nanometers to about 645 nanometers.
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