公开(公告)号：US20250166677A1

公开(公告)日：2025-05-22

申请号：US18785979

申请日：2024-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jichull Jeong ,  Youngwoo Park ,  Seungjin Park ,  Jindo Byun ,  Seunghoon Lee ,  Eunsang Lee ,  Chaekang Lim

IPC: G11C7/14 ,  G11C7/06 ,  G11C7/10

Abstract: Disclosed is a memory device which includes a driver unit that includes a pull-up driver and a pull-down driver, a ZQ calibration unit that performs ZQ calibration with respect to the driver unit based on an external resistor and a first reference voltage and generates a first ZQ code corresponding to the first reference voltage, and a code conversion unit that generates a second ZQ code corresponding to a second reference voltage different from the first reference voltage, based on the first ZQ code.

公开(公告)号：US20240143876A1

公开(公告)日：2024-05-02

申请号：US18462702

申请日：2023-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jichull Jeong ,  Taehyun Kim ,  Hyunjoong Kim ,  Euihyun Cheon

IPC: G06F30/27 ,  G06N3/092

CPC classification number: G06F30/27 ,  G06N3/092 ,  H03K19/20

Abstract: A simulation method and a simulation device are disclosed. A simulation method according to the inventive concept is provided. A simulation method of the inventive concept may include obtaining an initial state variable and an initial reward variable detected from the semiconductor device, training an agent to output a first action variable of a reinforcement learning model based on the initial state variable and the initial reward variable; and generating a first state variable of the reinforcement learning model and generating a first reward variable, based on the first action variable, wherein the first reward variable includes a skew reward variable for rewarding a skew occurring in the semiconductor device and a duty reward variable for rewarding a duty error rate of an output signal output from the semiconductor device.