公开(公告)号：US20250004361A1

公开(公告)日：2025-01-02

申请号：US18437779

申请日：2024-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Yong Cho ,  Hun Kang ,  Sangwook Kim ,  Useong Kim ,  Heungsuk Oh ,  Hee-Jun Lee ,  Jeeeun Jung

IPC: G03F1/36

Abstract: Disclosed are semiconductor fabrication methods and optical proximity correction (OPC) methods. The semiconductor fabrication method comprises performing OPC on a design pattern of a layout to generate a corrected layout, and forming a photoresist pattern on a substrate by using a photomask manufactured with the corrected layout. Performing the OPC includes generating shape points on a contour of the design pattern, producing a hash value of the shape point, selecting a first unique shape point that represents first shape points, determining a first correction bias of the first unique shape point, and creating a correction pattern by applying the first correction bias in common to the first shape points. Producing the hash value includes generating a query range around a target shape point and, based on geometry analysis in the query range, producing the hash value.

公开(公告)号：US12044961B2

公开(公告)日：2024-07-23

申请号：US17188140

申请日：2021-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Pilsoo Kang ,  Wonchan Lee ,  Sangwook Kim ,  Sungyong Moon ,  Seunghune Yang ,  Jeeeun Jung

IPC: G03F1/70 ,  G03F1/24 ,  G03F1/36 ,  H01L21/033

CPC classification number: G03F1/70 ,  G03F1/24 ,  H01L21/0334 ,  G03F1/36

Abstract: A mask forming method includes providing preliminary mask data including a Manhattan path such as a quadrangle, a bar, a polygon or a combination thereof based on a layout. Mask data including a curvilinear shape is prepared by correcting the preliminary mask data through application of an elliptical function, a B-spline curve, or a combination thereof. A mask pattern is formed on a mask substrate based on the mask data.

公开(公告)号：US09989842B2

公开(公告)日：2018-06-05

申请号：US15058300

申请日：2016-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeeeun Jung ,  Jeonghoon Lee

IPC: G06F17/50 ,  G03F1/36 ,  G03F1/44

CPC classification number: G03F1/36 ,  G03F1/44

Abstract: Provided is a method of generating test patterns. The method includes generating a first polygon, disposing the first polygon in a pattern region, selecting one region from peripheral regions of the first polygon, generating a second polygon, disposing the second polygon in the selected region, and repeating the above processes.