公开(公告)号：US12044961B2

公开(公告)日：2024-07-23

申请号：US17188140

申请日：2021-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Pilsoo Kang ,  Wonchan Lee ,  Sangwook Kim ,  Sungyong Moon ,  Seunghune Yang ,  Jeeeun Jung

IPC: G03F1/70 ,  G03F1/24 ,  G03F1/36 ,  H01L21/033

CPC classification number: G03F1/70 ,  G03F1/24 ,  H01L21/0334 ,  G03F1/36

Abstract: A mask forming method includes providing preliminary mask data including a Manhattan path such as a quadrangle, a bar, a polygon or a combination thereof based on a layout. Mask data including a curvilinear shape is prepared by correcting the preliminary mask data through application of an elliptical function, a B-spline curve, or a combination thereof. A mask pattern is formed on a mask substrate based on the mask data.