公开(公告)号：US11532696B2

公开(公告)日：2022-12-20

申请号：US16592842

申请日：2019-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gihee Cho ,  Jungoo Kang ,  Sangyeol Kang ,  Hyunsuk Lee

IPC: H01L49/02 ,  H01L27/108

Abstract: Semiconductor devices including a capacitor and methods of forming the same are provided. The semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. The lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.

公开(公告)号：US11929393B2

公开(公告)日：2024-03-12

申请号：US18093948

申请日：2023-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungoo Kang ,  Hyunsuk Lee ,  Gihee Cho ,  Sanghyuck Ahn

IPC: H01G4/12 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L28/91 ,  H01G4/1254 ,  H01L23/5222 ,  H01L28/56 ,  H01L2221/1084 ,  H01L2221/1089

Abstract: An integrated circuit device includes a capacitor structure, wherein the capacitor structure includes: a bottom electrode over a substrate; a supporter on a sidewall of the bottom electrode; a dielectric layer on the bottom electrode and the supporter; and a top electrode on the dielectric layer and covering the bottom electrode. The bottom electrode comprises: a base electrode layer over the substrate and extending in a first direction that is perpendicular to a top surface of the substrate, and a conductive capping layer including niobium nitride that is between a sidewall of the base electrode layer and the dielectric layer, and also between a top surface of the base electrode layer and the dielectric layer.

公开(公告)号：US11929392B2

公开(公告)日：2024-03-12

申请号：US18057894

申请日：2022-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gihee Cho ,  Jungoo Kang ,  Sangyeol Kang ,  Hyunsuk Lee

IPC: H01L49/02 ,  H10B12/00

CPC classification number: H01L28/60 ,  H10B12/315

Abstract: Semiconductor devices including a capacitor and methods of forming the same are provided. The semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. The lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.

公开(公告)号：US20200312952A1

公开(公告)日：2020-10-01

申请号：US16592842

申请日：2019-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gihee Cho ,  Jungoo Kang ,  Sangyeol Kang ,  Hyunsuk Lee

IPC: H01L49/02

Abstract: Semiconductor devices including a capacitor and methods of forming the same are provided. The semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. The lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.

公开(公告)号：US20230084276A1

公开(公告)日：2023-03-16

申请号：US18057894

申请日：2022-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： GIHEE CHO ,  Jungoo Kang ,  Sangyeol Kang ,  Hyunsuk Lee

IPC: H01L49/02

Abstract: Semiconductor devices including a capacitor and methods of forming the same are provided. The semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. The lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.

公开(公告)号：US11277711B2

公开(公告)日：2022-03-15

申请号：US16906428

申请日：2020-06-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SOLUM CO., LTD.

Inventor： Jungho Ahn ,  Hyunsuk Lee

IPC: H04W4/029 ,  G01S11/02 ,  G01R33/07 ,  H04B1/7163

Abstract: The disclosure relates to an electronic device, which is secured at a designated location, for determining a location area or a location area change of a movable external electronic device or, and an operating method thereof. An operating method of an electronic device including at least one antenna according to various embodiments of the disclosure may include: detecting that a state of a structure is changed from an open state to a close state, counting a sequence number from a first timing at which the state of the structure is changed to the close state to a second timing after a designated time based on information received from an external device via the at least one antenna using a designated communication scheme, determining location information of the external device based on the sequence number, and performing a designated function, based at least in part on the determined location information.

公开(公告)号：US11569344B2

公开(公告)日：2023-01-31

申请号：US16798826

申请日：2020-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungoo Kang ,  Hyunsuk Lee ,  Gihee Cho ,  Sanghyuck Ahn

IPC: H01L49/02 ,  H01G4/12 ,  H01L23/522

Abstract: An integrated circuit device includes a capacitor structure, wherein the capacitor structure includes: a bottom electrode over a substrate; a supporter on a sidewall of the bottom electrode; a dielectric layer on the bottom electrode and the supporter; and a top electrode on the dielectric layer and covering the bottom electrode. The bottom electrode comprises: a base electrode layer over the substrate and extending in a first direction that is perpendicular to a top surface of the substrate, and a conductive capping layer including niobium nitride that is between a sidewall of the base electrode layer and the dielectric layer, and also between a top surface of the base electrode layer and the dielectric layer.