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公开(公告)号：US11708633B2
公开(公告)日：2023-07-25
申请号：US16861614
申请日：2020-04-29
Inventor： Kyung-Eun Byun , Hyoungsub Kim , Taejin Park , Hyeonjin Shin , Hoijoon Kim , Wonsik Ahn , Mirine Leem
IPC: C23C16/30 , B22F7/00 , C23C16/46 , C23C16/448 , C23C16/455 , H01L21/02 , H01L21/285 , H01L31/032
CPC classification number: C23C16/305 , B22F7/008 , C23C16/448 , C23C16/45502 , C23C16/45514 , C23C16/46 , H01L21/02568 , H01L21/02581 , H01L21/28568 , H01L31/0324 , B22F2207/01 , B22F2302/45
Abstract: Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.
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公开(公告)号：US20160372615A1
公开(公告)日：2016-12-22
申请号：US14940696
申请日：2015-11-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： JAEHYUN YANG , Hyena Kwak , Hyoungsub Kim , Hoojeong Lee , Seongjun Park , Seongjun Jeong
IPC: H01L31/0336 , H01L31/112
CPC classification number: H01L31/0336 , H01L31/032 , H01L31/1129
Abstract: An optoelectronic device is disclosed. The disclosed optoelectronic device includes an oxide semiconductor layer and a semiconducting two-dimensional (2D) material layer forming a stack structure with the oxide semiconductor layer.
Abstract translation: 公开了一种光电子器件。 所公开的光电子器件包括氧化物半导体层和形成具有氧化物半导体层的堆叠结构的半导体二维（2D）材料层。
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Patent Agency Ranking
公开(公告)号：US11881399B2
公开(公告)日：2024-01-23
申请号：US17949418
申请日：2022-09-21
Inventor： Kyung-Eun Byun , Hyoungsub Kim , Taejin Park , Hoijoon Kim , Hyeonjin Shin , Wonsik Ahn , Mirine Leem , Yeonchoo Cho
IPC: H01L21/02
CPC classification number: H01L21/02568 , H01L21/0262 , H01L21/02491 , H01L21/02658
Abstract: A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
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公开(公告)号：US12077853B2
公开(公告)日：2024-09-03
申请号：US17132111
申请日：2020-12-23
Inventor： Hyangsook Lee , Hyoungsub Kim , Wonsik Ahn , Eunha Lee
IPC: C23C16/30 , C23C16/02 , C23C16/455 , H01L21/02 , H01L21/285
CPC classification number: C23C16/305 , C23C16/0281 , C23C16/45527 , C23C16/45553 , H01L21/02568 , H01L21/28568
Abstract: Provided are a method of growing a two-dimensional transition metal chalcogenide (TMC) film and a method of manufacturing a device including the two-dimensional TMC film. The method of growing a two-dimensional TMC film includes placing a metal layer having a predetermined pattern on a surface of a substrate; separately supplying a chalcogen precursor to a reaction chamber provided with the substrate; supplying a transition metal precursor to the reaction chamber; and evacuating the chalcogen precursor, the transition metal precursor, and by-products generated therefrom from the reaction chamber, wherein an amount of the chalcogen precursor and an amount of the transition metal precursor supplied to the reaction chamber may be controlled.
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公开(公告)号：US11476117B2
公开(公告)日：2022-10-18
申请号：US16928560
申请日：2020-07-14
Inventor： Kyung-Eun Byun , Hyoungsub Kim , Taejin Park , Hoijoon Kim , Hyeonjin Shin , Wonsik Ahn , Mirine Leem , Yeonchoo Cho
IPC: H01L21/02
Abstract: A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
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公开(公告)号：US20200208279A1
公开(公告)日：2020-07-02
申请号：US16545927
申请日：2019-08-20
Inventor： Taejin Park , Jinbum Kim , Hyoungsub Kim
Abstract: Disclosed herein are devices for hydrogen production and methods of fabricating hydrogen catalyst layers. The method may comprise forming on a substrate a first horizontal crystal and a first standing crystal that include each molybdenum oxide; forming a second horizontal crystal, a second standing crystal, and a preliminary layer on the second horizontal and standing crystals by supplying a sulfur gas onto the first horizontal crystal and the first standing crystal, the preliminary layer including molybdenum disulfide (MoS2); and removing the second horizontal crystal and the second standing crystal.
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公开(公告)号：US09882074B2
公开(公告)日：2018-01-30
申请号：US14940696
申请日：2015-11-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaehyun Yang , Hyena Kwak , Hyoungsub Kim , Hoojeong Lee , Seongjun Park , Seongjun Jeong
IPC: H01L31/0336 , H01L31/112 , H01L31/032
CPC classification number: H01L31/0336 , H01L31/032 , H01L31/1129
Abstract: An optoelectronic device is disclosed. The disclosed optoelectronic device includes an oxide semiconductor layer and a semiconducting two-dimensional (2D) material layer forming a stack structure with the oxide semiconductor layer.
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