公开(公告)号：US12080710B2

公开(公告)日：2024-09-03

申请号：US17361418

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Young-Lim Park ,  Changmu An ,  Hongseon Song ,  Yukyung Shin

IPC: H01L27/08 ,  H01L49/02

CPC classification number: H01L27/0805 ,  H01L28/60

Abstract: Disclosed are semiconductor devices and fabrication methods for the same. The semiconductor devices may include a bottom electrode, a dielectric layer, and a top electrode that are sequentially stacked on a semiconductor substrate. The bottom electrode includes a first doping region in contact with the dielectric layer, a main region spaced apart from the dielectric layer by the first doping region intervening therebetween, and a second doping region between the first doping region and the main region. Each of the first and second doping regions includes oxygen and a doping metal. In some embodiments, the second doping region may include nitrogen. The main region may be devoid of the doping metal. An amount of oxygen in the second doping region is less than an amount of oxygen in the first doping region.

公开(公告)号：US20250142850A1

公开(公告)日：2025-05-01

申请号：US18783982

申请日：2024-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seyoung Kim ,  Dahee Kim ,  Hongseon Song ,  Wanggon Lee ,  Sukjin Chung ,  Beomjong Kim

IPC: H10B12/00

Abstract: Provided is an integrated circuit device including a lower electrode, a dielectric layer on the lower electrode, an upper electrode facing the lower electrode with the dielectric layer therebetween, and an interfacial structure between the dielectric layer and the upper electrode, wherein the interfacial structure includes a first interfacial layer and a second interfacial layer, and a high band gap interfacial layer between the first interfacial layer and the second interfacial layer, wherein a third band gap of the high band gap interfacial layer is greater than a first band gap of the first interfacial layer and is greater than a second band gap of the second interfacial layer.