公开(公告)号：US20250142850A1

公开(公告)日：2025-05-01

申请号：US18783982

申请日：2024-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seyoung Kim ,  Dahee Kim ,  Hongseon Song ,  Wanggon Lee ,  Sukjin Chung ,  Beomjong Kim

IPC: H10B12/00

Abstract: Provided is an integrated circuit device including a lower electrode, a dielectric layer on the lower electrode, an upper electrode facing the lower electrode with the dielectric layer therebetween, and an interfacial structure between the dielectric layer and the upper electrode, wherein the interfacial structure includes a first interfacial layer and a second interfacial layer, and a high band gap interfacial layer between the first interfacial layer and the second interfacial layer, wherein a third band gap of the high band gap interfacial layer is greater than a first band gap of the first interfacial layer and is greater than a second band gap of the second interfacial layer.