公开(公告)号：US20190140066A1

公开(公告)日：2019-05-09

申请号：US16179250

申请日：2018-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-Hoon Lee ,  HOON-JOO NA ,  SUNG-IN SUH ,  MIN-WOO SONG ,  CHAN-HYEONG LEE ,  HU-YONG LEE ,  SANG-JIN HYUN

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/30 ,  H01L21/02

Abstract: Provided are an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes: a semiconductor substrate; a device isolation layer defining an active region of the semiconductor substrate; a gate insulating layer on the active region; a gate stack on the gate insulating layer; a spacer on a sidewall of the gate stack; and an impurity region provided on both sides of the gate stack, wherein the gate stack includes a metal carbide layer and a metal layer on the metal carbide layer, wherein the metal carbide layer includes a layer having a carbon content of about 0.01 at % to about 15 at %.