公开(公告)号：US10439048B2

公开(公告)日：2019-10-08

申请号：US16041025

申请日：2018-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Bum Lim ,  Jong-Ryul Jun ,  Eun-A Kim ,  Jong-Min Lee

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/306 ,  H01L21/027 ,  H01L49/02 ,  H01L21/033 ,  H01L21/311

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

公开(公告)号：US10050129B2

公开(公告)日：2018-08-14

申请号：US15437563

申请日：2017-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Bum Lim ,  Jong-Ryul Jun ,  Eun-A Kim ,  Jong-Min Lee

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/768 ,  H01L21/306 ,  H01L21/027

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

公开(公告)号：US20180350957A1

公开(公告)日：2018-12-06

申请号：US16041025

申请日：2018-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Bum Lim ,  Jong-Ryul Jun ,  Eun-A Kim ,  Jong-Min Lee

IPC: H01L29/66 ,  H01L49/02 ,  H01L21/027 ,  H01L21/306 ,  H01L21/768

CPC classification number: H01L29/66795 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/30604 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897 ,  H01L28/00 ,  H01L29/66621

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.