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公开(公告)号：US09671969B2
公开(公告)日：2017-06-06
申请号：US15205578
申请日：2016-07-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： In Bo Shim , Jae-Sang Yun , Doo-Jin Yi , Young Joon Jang
CPC classification number: G06F3/0625 , G06F3/0655 , G06F3/0688 , G11C16/0466 , G11C16/0483 , G11C16/10 , G11C16/20 , G11C16/3454 , G11C16/3459
Abstract: Methods of programming firmware in a data storage device include pre-programming memory cells included in at least one nonvolatile memory of a plurality of nonvolatile memories using a first verification voltage higher than a first reference voltage before a surface mounting technology is applied to the nonvolatile memories.
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2.发明申请DATA STORAGE HAVING RECOVERY FUNCTION FOR THRESHOLD VOLTAGE DISTRIBUTION CHANGE OF MEMORY CELLS DUE TO APPLYING SURFACE MOUNTING TECHNOLOGY AND OPERATING METHOD 有权具有恢复功能的数据存储对应用表面安装技术和操作方法的存储器电池的阈值电压分配更改公开(公告)号：US20170060463A1
公开(公告)日：2017-03-02
申请号：US15205578
申请日：2016-07-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： In Bo Shim , Jae-Sang Yun , Doo-Jin Yi , Young Joon Jang
CPC classification number: G06F3/0625 , G06F3/0655 , G06F3/0688 , G11C16/0466 , G11C16/0483 , G11C16/10 , G11C16/20 , G11C16/3454 , G11C16/3459
Abstract: Methods of programming firmware in a data storage device include pre-programming memory cells included in at least one nonvolatile memory of a plurality of nonvolatile memories using a first verification voltage higher than a first reference voltage before a surface mounting technology is applied to the nonvolatile memories.
Abstract translation: 在数据存储设备中编程固件的方法包括在表面贴装技术应用于非易失性存储器之前使用高于第一参考电压的第一验证电压来预包括多个非易失性存储器的至少一个非易失性存储器中的存储器单元 。
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