公开(公告)号：US11587622B2

公开(公告)日：2023-02-21

申请号：US17326397

申请日：2021-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjin Shin ,  Dohui Kim ,  Sanggyeong Won

IPC: G11C16/30 ,  G11C16/10 ,  G11C16/14 ,  G11C7/10 ,  G11C16/26

Abstract: A memory device includes a memory cell array, a voltage switching circuit configured to switch a plurality of voltages provided to the memory cell array in response to a switching control signal, a discharge circuit configured to discharge the voltage switching circuit in response to a discharge signal, and a control circuit configured to generate the switching control signal based on a command and a high voltage enable signal received from outside of the memory device. The voltage switching circuit includes a high voltage switching circuit, and a low voltage switching circuit. The control circuit is configured to generate the discharge signal based on the command and an activated high voltage enable signal responsive to detecting external abortion while performing an operation corresponding to the command from among a program operation and an erase operation.

公开(公告)号：US20210391015A1

公开(公告)日：2021-12-16

申请号：US17326397

申请日：2021-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjin Shin ,  Dohui Kim ,  Sanggyeong Won

IPC: G11C16/10 ,  G11C16/14 ,  G11C16/26 ,  G11C16/30 ,  G11C7/10

Abstract: A memory device includes a memory cell array, a voltage switching circuit configured to switch a plurality of voltages provided to the memory cell array in response to a switching control signal, a discharge circuit configured to discharge the voltage switching circuit in response to a discharge signal, and a control circuit configured to generate the switching control signal based on a command and a high voltage enable signal received from outside of the memory device. The voltage switching circuit includes a high voltage switching circuit, and a low voltage switching circuit. The control circuit is configured to generate the discharge signal based on the command and an activated high voltage enable signal responsive to detecting external abortion while performing an operation corresponding to the command from among a program operation and an erase operation.