公开(公告)号：US20200185383A1

公开(公告)日：2020-06-11

申请号：US16418366

申请日：2019-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Woo KIM ,  Choelhwyi BAE ,  Yang Gyeom KIM ,  Sung Eun KIM ,  Sang Woo PAE ,  Hyun Chul SAGONG

IPC: H01L27/092 ,  H01L27/11 ,  H01L29/40 ,  H01L29/49 ,  H01L21/28 ,  H01L21/765 ,  H01L21/8238

Abstract: A semiconductor device includes a first fin that protrudes from a substrate and extends in a first direction, a second fin that protrudes from the substrate and extends in the first direction, the first fin and the second fin being spaced apart, a gate line including a dummy gate electrode and a gate electrode, the dummy gate electrode at least partially covering the first fin, the gate electrode at least partially covering the second fin, the dummy gate electrode including different materials from the gate electrode, the gate line covering the first fin and the second fin, the gate line extending in a second direction different from the first direction, and a gate dielectric layer between the gate electrode and the second fin.