公开(公告)号：US20250154648A1

公开(公告)日：2025-05-15

申请号：US18791776

申请日：2024-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunwoo KIM ,  Daeun KIM ,  Akio SAITO ,  Tomoharu YOSHINO ,  Kazuki HARANO ,  Takashi HIGASHINO ,  Shotaro TAGUCHI ,  Yoshiki MANABE ,  Yu Jin PARK ,  Byung Seok LEE ,  Seung-min RYU ,  Gyu-Hee PARK ,  Younjoung CHO

IPC: C23C16/34 ,  C07F17/00 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

Abstract: Provided are a precursor for forming a metal thin film including a metal compound represented by Chemical Formula 1, a method for manufacturing a metal thin film using the same, and a metal thin film manufactured by the method.