公开(公告)号：US20240178144A1

公开(公告)日：2024-05-30

申请号：US18521994

申请日：2023-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Hyeonjin SHIN ,  Sangwon KIM ,  Changhyun KIM ,  Baekwon PARK ,  Kyung-Eun BYUN

IPC: H01L23/532

CPC classification number: H01L23/53276 ,  H01L23/53295

Abstract: An interconnect structure may include a first dielectric layer including a trench, a first conductive layer in the trench and including a plurality of first graphene layers stacked in a direction from an inner surface of the trench toward a center of the trench, a second dielectric layer on the first dielectric layer and including a through hole extending to the trench, and a second conductive layer in the through hole.

公开(公告)号：US20250120150A1

公开(公告)日：2025-04-10

申请号：US18674359

申请日：2024-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baekwon PARK ,  Minseok YOO ,  Alum JUNG ,  Minsu SEOL ,  Hyungjun YOUN

IPC: H01L29/18 ,  H01L21/02 ,  H01L29/786

Abstract: A thin film structure according to various example embodiments includes a first buffer layer, a transition metal dichalcogenide layer on the first buffer layer, and a second buffer layer on the transition metal dichalcogenide layer, wherein the second buffer layer includes same chalcogen element as a chalcogen element included in the transition metal dichalcogenide layer.

公开(公告)号：US20230114933A1

公开(公告)日：2023-04-13

申请号：US17958653

申请日：2022-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun KIM ,  Kyung-Eun BYUN ,  Keunwook SHIN ,  Changseok LEE ,  Baekwon PARK

IPC: H01L21/02 ,  H01L23/532 ,  C23C16/40 ,  C23C16/455 ,  H01L21/768

Abstract: Provided are a graphene interconnect structure, an electronic device including the graphene interconnect structure, and a method of manufacturing the graphene interconnect structure. The graphene interconnect structure may include: a first oxide dielectric material layer; a second oxide dielectric material layer on a surface of the first oxide dielectric material layer and having a dielectric constant greater than that of the first oxide dielectric material layer; and a graphene layer on a surface of the second oxide dielectric material layer opposite to the surface on which the first oxide dielectric material layer is located.

公开(公告)号：US20250159946A1

公开(公告)日：2025-05-15

申请号：US18811194

申请日：2024-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Baekwon PARK ,  Keunwook SHIN ,  Changhyun KIM ,  Minsu SEOL ,  Joungeun YOO ,  Hyunmi LEE

IPC: H01L29/76 ,  H01L21/02 ,  H01L21/443 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device may include a gate electrode, a metal nitride layer on the gate electrode, a gate insulating film on the metal nitride layer, a channel on the gate insulating film, a source electrode in one side of the channel, and a drain electrode in another side of the channel.

公开(公告)号：US20250142896A1

公开(公告)日：2025-05-01

申请号：US18820588

申请日：2024-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Baekwon PARK ,  Minsu SEOL ,  Sungil PARK ,  Jaehyun PARK ,  Min seok YOO

IPC: H01L29/76 ,  H01L21/02 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a metal nitride layer, a channel provided in the metal nitride layer and including a two-dimensional (2D) semiconductor material, a source electrode provided on one side of the channel, a drain electrode provided on another side of the channel, a gate insulating layer provided in the channel, and a gate electrode provided on the gate insulating layer.