公开(公告)号：US20250142896A1

公开(公告)日：2025-05-01

申请号：US18820588

申请日：2024-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Baekwon PARK ,  Minsu SEOL ,  Sungil PARK ,  Jaehyun PARK ,  Min seok YOO

IPC: H01L29/76 ,  H01L21/02 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a metal nitride layer, a channel provided in the metal nitride layer and including a two-dimensional (2D) semiconductor material, a source electrode provided on one side of the channel, a drain electrode provided on another side of the channel, a gate insulating layer provided in the channel, and a gate electrode provided on the gate insulating layer.