公开(公告)号：US20190129211A1

公开(公告)日：2019-05-02

申请号：US16059110

申请日：2018-08-09

Applicant: Samsung Display Co. Ltd.

Inventor： Jin Lak Kim ,  Su Min An ,  Young Jun Kim

IPC: G02F1/1339 ,  G02F1/1343 ,  G02F1/1335 ,  G02F1/1333 ,  G02F1/1368

Abstract: A display device and a method of manufacturing a display device. The display device includes a first insulation substrate and a second insulation substrate facing each other and each including a pixel region and a pixel boundary, a column spacer disposed on the second insulation substrate, and a common electrode disposed on the second insulation substrate, covering at least a part of the column spacer and including a conductive polymer.

公开(公告)号：US12022690B2

公开(公告)日：2024-06-25

申请号：US17244857

申请日：2021-04-29

Applicant: Samsung Display Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Jun Hyung Lim ,  Hyungjun Kim ,  Hyungjun Kim ,  Young Jun Kim ,  Ju Sang Park ,  Whang Je Woo

IPC: H10K59/121 ,  H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/76 ,  H01L29/786 ,  H10K59/12 ,  H10K71/00

CPC classification number: H10K59/1213 ,  H10K71/00 ,  H01L21/02568 ,  H01L21/0262 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7606 ,  H01L29/78696 ,  H10K59/1201

Abstract: A method may be used for manufacturing a semiconductor element. The method may include the following steps: preparing a substrate; forming a semiconductor layer on the substrate, wherein the semiconductor layer includes crystallized two-dimensional layers; forming a source electrode and a drain electrode on the semiconductor layer; forming an semiconductor member by wet etching the semiconductor layer using sodium hypochlorite as an etchant, wherein the wet etching results in a residue; and removing the residue using purified water and an inert gas.