Organic light emitting diode display
    1.
    发明授权
    Organic light emitting diode display 有权
    有机发光二极管显示

    公开(公告)号:US09570534B2

    公开(公告)日:2017-02-14

    申请号:US14946231

    申请日:2015-11-19

    Abstract: An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.

    Abstract translation: 一种有机发光二极管显示器包括:基板,分别包括形成在第一和第二区域上的第一和第二栅电极,分别形成在第一和第二栅电极上的第一和第二栅极绝缘体, 以及分别形成在所述第一和第二栅极绝缘体上的第二半导体层,所述第一半导体层分别包括第一沟道区,所述第二半导体层包括第二沟道区,在所述衬底上形成的层间绝缘体,以及至少部分 第一和第二半导体层,分别形成在第一和第二沟道区上并由层间绝缘体包围的第一和第二蚀刻停止层,以及第一和第二源电极和第一和第二漏电极接触 第一和第二半导体层分别通过层间绝缘体。

    DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    显示装置及其制造方法

    公开(公告)号:US20140038333A1

    公开(公告)日:2014-02-06

    申请号:US14049119

    申请日:2013-10-08

    Abstract: A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer.

    Abstract translation: 显示装置包括基板,在基板上包括栅电极和第一电容器电极的第一导电膜图案,第一导电膜图案上的栅极绝缘层图案,包括有源层和第二电容器的多晶硅膜图案 栅极绝缘层图案上的电极,多晶硅膜图案上的层间绝缘层,穿过栅极绝缘层图案的多个第一接触孔和层间绝缘层,以暴露第一导电膜图案的一部分,多个 第二接触孔穿过层间绝缘层以暴露多晶硅膜图案的一部分,以及在层间绝缘层上包括源电极,漏电极和像素电极的第二导电膜图案。

    ORGANIC LIGHT EMITTING DIODE DISPLAY
    3.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY 有权
    有机发光二极管显示

    公开(公告)号:US20160079338A1

    公开(公告)日:2016-03-17

    申请号:US14946231

    申请日:2015-11-19

    Abstract: An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.

    Abstract translation: 一种有机发光二极管显示器包括:基板,分别包括形成在第一和第二区域上的第一和第二栅电极,分别形成在第一和第二栅电极上的第一和第二栅极绝缘体, 以及分别形成在所述第一和第二栅极绝缘体上的第二半导体层,所述第一半导体层分别包括第一沟道区,所述第二半导体层包括第二沟道区,在所述衬底上形成的层间绝缘体,以及至少部分 第一和第二半导体层,分别形成在第一和第二沟道区上并由层间绝缘体包围的第一和第二蚀刻停止层,以及第一和第二源电极和第一和第二漏电极接触 第一和第二半导体层分别通过层间绝缘体。

    Method of manufacturing organic light emitting diode display
    4.
    发明授权
    Method of manufacturing organic light emitting diode display 有权
    制造有机发光二极管显示器的方法

    公开(公告)号:US09070904B2

    公开(公告)日:2015-06-30

    申请号:US14193227

    申请日:2014-02-28

    Abstract: An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.

    Abstract translation: OLED显示器包括在具有第一栅电极,第二栅极和第一电容器电极的基板上的第一多晶硅层图案,栅极绝缘层图案,包括第一有源层的第二多晶硅层图案,第二有源层 以及电容器多晶虚拟层,在第一有源层的预定区域上包括第一源极和漏极接触层的第三非晶硅层图案,在第二有源层的预定区域上的第二源极和漏极接触层,以及 电容器多晶虚拟层上的电容器非晶虚拟层,以及包括第一源极/漏极,第二源极/漏极和第二电容器电极的数据金属层图案。

    Organic light emitting diode display and method for manufacturing the same

    公开(公告)号:US08865485B2

    公开(公告)日:2014-10-21

    申请号:US14218088

    申请日:2014-03-18

    CPC classification number: H01L51/56 H01L27/1288 H01L27/3248

    Abstract: An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.

    Display device and method for manufacturing the same
    6.
    发明授权
    Display device and method for manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号:US09142780B2

    公开(公告)日:2015-09-22

    申请号:US14049119

    申请日:2013-10-08

    Abstract: A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer.

    Abstract translation: 显示装置包括基板,在基板上包括栅电极和第一电容器电极的第一导电膜图案,第一导电膜图案上的栅极绝缘层图案,包括有源层和第二电容器的多晶硅膜图案 栅极绝缘层图案上的电极,多晶硅膜图案上的层间绝缘层,穿过栅极绝缘层图案的多个第一接触孔和层间绝缘层,以暴露第一导电膜图案的一部分,多个 第二接触孔穿过层间绝缘层以暴露多晶硅膜图案的一部分,以及在层间绝缘层上包括源电极,漏电极和像素电极的第二导电膜图案。

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