Abstract:
A memory is provided, which comprises an electrically erasable and programmable read only memory (EEPROM) configured to store an operation system and to be rewritable in response to a write operation signal, an address comparator configured to be connected to Inter Integrated Circuit (I2C) lines and output the write operation signal to the EEPROM in response to an external signal, a digital-to-analog converter (DAC) unit configured to determine whether to connect a DAC resistor and the I2C lines in response to the external signal and a pull-up resistor unit configured to be connected to the I2C lines.
Abstract:
A method of reducing a time for switching a gate line driving signal of display device having plural gate lines from a level that is less than a full gate-on level to the gate-on level is disclosed. The method may include: during a gate line pre-charging period of a respective gate line, causing the gate line driving signal to be at the full gate-on level; during a corresponding gate line main-charging period that follows the pre-charging period, causing the gate line driving signal of to be at the full gate-on level; and during an interposed period that is interposed between the gate line pre-charging period and its corresponding gate line main-charging period, causing the gate line driving signal to be at an intermediate level that is between the full gate-on level and an opposed gate-off level.