公开(公告)号：US20200257338A1

公开(公告)日：2020-08-13

申请号：US16717002

申请日：2019-12-17

Applicant: Samsung Display Co., Ltd.

Inventor： YOUNGSANG PARK ,  Inseok SEO ,  HungKun AHN ,  Young-Shin PYO ,  CHULHO JEONG ,  SUNGGUK AN ,  Jangdoo LEE

IPC: G06F1/16 ,  G02B1/16 ,  G02B1/14

Abstract: A display device includes a display module and a window panel disposed on an upper portion of the display module. The window panel includes a base film, and a functional layer disposed on an upper portion of the base film and having a hard coating agent and an anti-static agent.

公开(公告)号：US20140170790A1

公开(公告)日：2014-06-19

申请号：US14186194

申请日：2014-02-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Seob LEE ,  Yong-Hwan PARK ,  Young-Shin PYO

IPC: H01L27/12 ,  G02F1/1333

CPC classification number: H01L27/127 ,  G02F1/133351 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L29/78603 ,  H01L51/003

Abstract: A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

Abstract translation: 根据示例实施例的薄膜晶体管包括：基板主体; 形成在所述基板主体上并包括具有约2000欧姆/平方至约8000欧姆/平方的表面电阻的多晶硅膜的半导体层; 以及每个与半导体层接触并且包括具有约350至约2000欧姆的电阻的金属材料的源电极和漏电极。