公开(公告)号：US08785934B2

公开(公告)日：2014-07-22

申请号：US13677176

申请日：2012-11-14

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Woo Whangbo ,  Shi-Yul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

IPC: H01L29/04 ,  H01L29/10

CPC classification number: H01L29/4908 ,  H01L27/124 ,  H01L27/1288

Abstract: A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.

Abstract translation: 薄膜晶体管基板包括基底基板，栅极电极，栅极绝缘层，表面处理层，有源层，源电极和漏电极。 栅电极形成在基底基板上。 栅极绝缘层形成在基底基板上以覆盖栅电极。 通过用含氮气体处理栅极绝缘层，在栅极绝缘层上形成表面处理层，以防止漏电流。 在表面处理层上形成有源层以覆盖栅电极。 在有源层上形成彼此隔开预定距离的源电极和栅电极。