SEMICONDUCTOR ELEMENT AND ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING A SEMICONDUCTOR ELEMENT
    1.
    发明申请
    SEMICONDUCTOR ELEMENT AND ORGANIC LIGHT EMITTING DISPLAY DEVICE HAVING A SEMICONDUCTOR ELEMENT 有权
    具有半导体元件的半导体元件和有机发光显示器件

    公开(公告)号:US20160225837A1

    公开(公告)日:2016-08-04

    申请号:US14811616

    申请日:2015-07-28

    CPC classification number: H01L29/7869 H01L51/0545 H01L51/102

    Abstract: A semiconductor element includes a substrate, a gate electrode, an active layer, a contact layer, a first electrode, and a second electrode. The gate electrode is disposed on the substrate. The gate insulation layer is disposed on the gate electrode. The active layer is disposed on the gate insulation layer, and includes a first end portion and a second end portion that is opposite the first end portion. The contact layer overlaps the second end portion of the active layer. The first electrode is in contact with the first end portion. The second electrode is spaced apart from the first electrode, and is in contact with the contact layer.

    Abstract translation: 半导体元件包括基板,栅电极,有源层,接触层,第一电极和第二电极。 栅电极设置在基板上。 栅极绝缘层设置在栅电极上。 有源层设置在栅极绝缘层上,并且包括与第一端部相对的第一端部部分和第二端部部分。 接触层与有源层的第二端部重叠。 第一电极与第一端部接触。 第二电极与第一电极间隔开并与接触层接触。

    Organic light-emitting display device and method of manufacturing the same
    2.
    发明授权
    Organic light-emitting display device and method of manufacturing the same 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US09373669B2

    公开(公告)日:2016-06-21

    申请号:US14815327

    申请日:2015-07-31

    Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

    Abstract translation: 公开了一种有机发光显示装置,其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示​​装置和/或可容易地批量生产的有机发光显示装置。 另外公开了一种制造有机发光显示装置的方法。 有机发光显示装置可以包括例如薄膜晶体管(TFT),其包括栅电极,与栅电极绝缘的有源层,与栅电极绝缘的源电极和漏电极,并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

    BACK PLANE OF FLAT PANEL DISPLAY AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    BACK PLANE OF FLAT PANEL DISPLAY AND METHOD OF MANUFACTURING THE SAME 审中-公开
    平板显示器的背板及其制造方法

    公开(公告)号:US20140312315A1

    公开(公告)日:2014-10-23

    申请号:US14011700

    申请日:2013-08-27

    Abstract: According to an aspect of the present invention, there is provided a back plane for a flat-panel display device and a method of manufacturing the same. The back plane including: a substrate; a gate electrode on the substrate; a first insulation layer on the substrate and covering the gate electrode; a semiconductor layer on the first insulation layer and corresponding to the gate electrode; and a source electrode and a drain electrode on the semiconductor layer and electrically coupled to respective portions of the semiconductor layer. Here, the semiconductor layer includes indium, tin, zinc, and gallium, and an atomic concentration of the gallium is from about 5% to about 15%.

    Abstract translation: 根据本发明的一个方面,提供了一种用于平板显示装置的背板及其制造方法。 背面包括:基材; 基板上的栅电极; 在所述基板上的第一绝缘层,并覆盖所述栅电极; 在所述第一绝缘层上并对应于所述栅电极的半导体层; 以及在半导体层上的源电极和漏电极,并电耦合到半导体层的各个部分。 这里,半导体层包括铟,锡,锌和镓,并且镓的原子浓度为约5%至约15%。

    Organic light-emitting display device
    6.
    发明授权
    Organic light-emitting display device 有权
    有机发光显示装置

    公开(公告)号:US09105862B2

    公开(公告)日:2015-08-11

    申请号:US14010164

    申请日:2013-08-26

    Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

    Abstract translation: 公开了一种有机发光显示装置,其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示​​装置和/或可容易地批量生产的有机发光显示装置。 有机发光显示装置可以包括例如薄膜晶体管(TFT),其包括栅电极,与栅电极绝缘的有源层,与栅电极绝缘的源电极和漏电极,并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

    Thin film transistor, method of manufacturing the same and flat panel display device having the same
    7.
    发明授权
    Thin film transistor, method of manufacturing the same and flat panel display device having the same 有权
    薄膜晶体管,其制造方法和具有该薄膜晶体管的平板显示装置

    公开(公告)号:US08659016B2

    公开(公告)日:2014-02-25

    申请号:US13889752

    申请日:2013-05-08

    CPC classification number: H01L29/7869 H01L29/78606

    Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

    Abstract translation: 使用氧化物半导体作为有源层的薄膜晶体管(TFT),TFT的制造方法以及具有TFT的平板显示装置包括:形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中,界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性,因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙,所以物理地防止了电荷俘获。

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