公开(公告)号：US11996045B2

公开(公告)日：2024-05-28

申请号：US18094926

申请日：2023-01-09

Applicant: Samsung Display Co., Ltd.

Inventor： Junehwan Kim ,  Yoonho Kim ,  Taeyoung Kim ,  Jongwoo Park ,  Daeyoun Cho

IPC: G09G3/3233

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2310/08 ,  G09G2320/0626

Abstract: A pixel includes: a first driving transistor and a second driving transistor; a first select transistor connected between a gate of the first driving transistor and a gate node; and a second select transistor connected between a gate of the second driving transistor and the gate node.

公开(公告)号：US20230165071A1

公开(公告)日：2023-05-25

申请号：US17991866

申请日：2022-11-22

Applicant: Samsung Display Co., Ltd.

Inventor： Hyojung Kim ,  Sangsub Kim ,  Jongwoo Park ,  Junehwan Kim ,  Taeyoung Kim ,  Youngtae Choi ,  Hyuncheol Hwang

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/05 ,  H01L51/00

CPC classification number: H01L27/3274 ,  H01L51/0037 ,  H01L51/56 ,  H01L51/0094 ,  H01L51/0512 ,  H01L2227/323

Abstract: The invention provides a display apparatus and a method for manufacturing the same. The display apparatus includes a substrate and a thin-film transistor. The thin-film transistor includes a semiconductor layer disposed on the substrate and includes a gate electrode overlapping the semiconductor layer and insulated from the semiconductor layer. The semiconductor layer includes a polysilicon layer and an organic layer. The polysilicon layer has a first surface and has an uneven surface overlapping the first surface. The organic layer is disposed on the uneven surface of polysilicon layer and includes an organic semiconductor material.

公开(公告)号：US20220149322A1

公开(公告)日：2022-05-12

申请号：US17365909

申请日：2021-07-01

Applicant: Samsung Display Co., Ltd.

Inventor： Hyojung Kim ,  Jungmin Park ,  Jongwoo Park ,  Daeyoun Cho ,  Junehwan Kim ,  Youngjoo Noh ,  Sora Bak ,  Youngtae Choi

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/56

Abstract: A display apparatus includes a first substrate including a polymer resin, a protective layer on the first substrate, the protective layer including at least one selected from SiOCH, SiOC, SiOF, aromatic amine, diazonium tetrafluoroborate, and an aromatic diazonium compound, and a buffer layer on the protective layer, the buffer layer including a material different from a material included in the protective layer.

公开(公告)号：US20210335926A1

公开(公告)日：2021-10-28

申请号：US17140660

申请日：2021-01-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Junehwan Kim ,  Taeyoung Kim ,  Jongwoo Park ,  Kiju Im ,  Hyuncheol Hwang

IPC: H01L27/32

Abstract: A display device having a thin-film transistor with increased mobility of electrons or holes includes a first semiconductor layer arranged on a substrate and including a first channel region, a first source region, and a first drain region; a first stressor arranged between the substrate and the first semiconductor layer and which overlaps the first source region in a plan view; a second stressor arranged between the substrate and the first semiconductor layer and which overlaps the first drain region in the plan view, where the second stressor is spaced apart from the first stressor; a gate insulating layer arranged on the first semiconductor layer; and a first gate electrode arranged on the gate insulating layer and which overlaps the first semiconductor layer in the plan view.

公开(公告)号：US12016203B2

公开(公告)日：2024-06-18

申请号：US17140660

申请日：2021-01-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Junehwan Kim ,  Taeyoung Kim ,  Jongwoo Park ,  Kiju Im ,  Hyuncheol Hwang

IPC: H10K59/12 ,  G09G3/3233 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10K10/46 ,  H10K59/121 ,  H10K59/35 ,  H10K77/10 ,  H10K102/00

CPC classification number: H10K59/12 ,  G09G3/3233 ,  G09G2320/0233 ,  H01L29/1054 ,  H01L29/66757 ,  H01L29/7842 ,  H01L29/78666 ,  H01L29/78675 ,  H01L2924/13069 ,  H10K10/464 ,  H10K59/1213 ,  H10K59/35 ,  H10K77/111 ,  H10K2102/311

Abstract: A display device having a thin-film transistor with increased mobility of electrons or holes includes a first semiconductor layer arranged on a substrate and including a first channel region, a first source region, and a first drain region; a first stressor arranged between the substrate and the first semiconductor layer and which overlaps the first source region in a plan view; a second stressor arranged between the substrate and the first semiconductor layer and which overlaps the first drain region in the plan view, where the second stressor is spaced apart from the first stressor; a gate insulating layer arranged on the first semiconductor layer; and a first gate electrode arranged on the gate insulating layer and which overlaps the first semiconductor layer in the plan view.

公开(公告)号：US11925053B2

公开(公告)日：2024-03-05

申请号：US17365909

申请日：2021-07-01

Applicant: Samsung Display Co., Ltd.

Inventor： Hyojung Kim ,  Jungmin Park ,  Jongwoo Park ,  Daeyoun Cho ,  Junehwan Kim ,  Youngjoo Noh ,  Sora Bak ,  Youngtae Choi

IPC: H10K50/844 ,  H10K59/12 ,  H10K71/00 ,  H10K77/10

CPC classification number: H10K50/844 ,  H10K71/00 ,  H10K77/111 ,  H10K59/12 ,  H10K59/1201

Abstract: A display apparatus includes a first substrate including a polymer resin, a protective layer on the first substrate, the protective layer including at least one selected from SiOCH, SiOC, SiOF, aromatic amine, diazonium tetrafluoroborate, and an aromatic diazonium compound, and a buffer layer on the protective layer, the buffer layer including a material different from a material included in the protective layer.

公开(公告)号：US20230230545A1

公开(公告)日：2023-07-20

申请号：US18094926

申请日：2023-01-09

Applicant: Samsung Display Co., Ltd.

Inventor： Junehwan Kim ,  Yoonho Kim ,  Taeyoung Kim ,  Jongwoo Park ,  Daeyoun Cho

IPC: G09G3/3233

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/08 ,  G09G2300/0861 ,  G09G2320/0626 ,  G09G2310/0262

Abstract: A pixel includes: a first driving transistor and a second driving transistor; a first select transistor connected between a gate of the first driving transistor and a gate node; and a second select transistor connected between a gate of the second driving transistor and the gate node.

公开(公告)号：US20230085460A1

公开(公告)日：2023-03-16

申请号：US17703176

申请日：2022-03-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kiju Im ,  Jongwoo Park ,  Hyeokjae Kwon ,  Yoonho Kim ,  Jongyeob Kim ,  Junehwan Kim ,  Taeyoung Kim ,  Hyuncheol Hwang

IPC: H01L27/32 ,  H01L51/52

Abstract: A display device includes a display panel and a metal plate disposed under the display panel, where the metal plate includes a first area and a second area which is adjacent to the first area, and a plurality of through holes is defined through the metal plate. The plurality of through holes includes a first through hole and a second through hole, which are spaced apart from each other at a first interval in the first area, and a third through hole and a fourth through hole, which are spaced apart from each other at a second interval in the second area, and the first interval is different from the second interval.