公开(公告)号：US20160141378A1

公开(公告)日：2016-05-19

申请号：US14691092

申请日：2015-04-20

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo YANG ,  Hyune Ok SHIN ,  Chang Oh JEONG ,  Su Kyoung YANG ,  Dong Min LEE

IPC: H01L29/417 ,  C22C29/12 ,  H01L29/24 ,  H01L29/45 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/41733 ,  C22C29/12 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/7869

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.

Abstract translation: 薄膜晶体管包括栅电极，半导体层以及与半导体层接触的源极和漏极。 源极和漏极包括在c轴方向Lc（002）上的晶体尺寸范围为67以上至144以下的金属氧化物。

公开(公告)号：US20190088752A1

公开(公告)日：2019-03-21

申请号：US16192802

申请日：2018-11-16

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo YANG ,  Hyune Ok SHIN ,  Chang Oh JEONG ,  Su Kyoung YANG ,  Dong Min LEE

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  C22C29/12

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 ∈ or less.